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Article: One-step synthesis of single-site vanadium substitution in 1T-WS2 monolayers for enhanced hydrogen evolution catalysis

TitleOne-step synthesis of single-site vanadium substitution in 1T-WS<inf>2</inf> monolayers for enhanced hydrogen evolution catalysis
Authors
Issue Date2021
Citation
Nature Communications, 2021, v. 12, n. 1, article no. 709 How to Cite?
AbstractMetallic tungsten disulfide (WS ) monolayers have been demonstrated as promising electrocatalysts for hydrogen evolution reaction (HER) induced by the high intrinsic conductivity, however, the key challenges to maximize the catalytic activity are achieving the metallic WS with high concentration and increasing the density of the active sites. In this work, single-atom-V catalysts (V SACs) substitutions in 1T-WS monolayers (91% phase purity) are fabricated to significantly enhance the HER performance via a one-step chemical vapor deposition strategy. Atomic-resolution scanning transmission electron microscopy (STEM) imaging together with Raman spectroscopy confirm the atomic dispersion of V species on the 1T-WS monolayers instead of energetically favorable 2H-WS monolayers. The growth mechanism of V SACs@1T-WS monolayers is experimentally and theoretically demonstrated. Density functional theory (DFT) calculations demonstrate that the activated V-atom sites play vital important role in enhancing the HER activity. In this work, it opens a novel path to directly synthesize atomically dispersed single-metal catalysts on metastable materials as efficient and robust electrocatalysts. 2 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298376
PubMed Central ID
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHan, Ali-
dc.contributor.authorZhou, Xiaofeng-
dc.contributor.authorWang, Xijun-
dc.contributor.authorLiu, Sheng-
dc.contributor.authorXiong, Qihua-
dc.contributor.authorZhang, Qinghua-
dc.contributor.authorGu, Lin-
dc.contributor.authorZhuang, Zechao-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorLi, Fanxing-
dc.contributor.authorWang, Dingsheng-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLi, Yadong-
dc.date.accessioned2021-04-08T03:08:17Z-
dc.date.available2021-04-08T03:08:17Z-
dc.date.issued2021-
dc.identifier.citationNature Communications, 2021, v. 12, n. 1, article no. 709-
dc.identifier.urihttp://hdl.handle.net/10722/298376-
dc.description.abstractMetallic tungsten disulfide (WS ) monolayers have been demonstrated as promising electrocatalysts for hydrogen evolution reaction (HER) induced by the high intrinsic conductivity, however, the key challenges to maximize the catalytic activity are achieving the metallic WS with high concentration and increasing the density of the active sites. In this work, single-atom-V catalysts (V SACs) substitutions in 1T-WS monolayers (91% phase purity) are fabricated to significantly enhance the HER performance via a one-step chemical vapor deposition strategy. Atomic-resolution scanning transmission electron microscopy (STEM) imaging together with Raman spectroscopy confirm the atomic dispersion of V species on the 1T-WS monolayers instead of energetically favorable 2H-WS monolayers. The growth mechanism of V SACs@1T-WS monolayers is experimentally and theoretically demonstrated. Density functional theory (DFT) calculations demonstrate that the activated V-atom sites play vital important role in enhancing the HER activity. In this work, it opens a novel path to directly synthesize atomically dispersed single-metal catalysts on metastable materials as efficient and robust electrocatalysts. 2 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofNature Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleOne-step synthesis of single-site vanadium substitution in 1T-WS<inf>2</inf> monolayers for enhanced hydrogen evolution catalysis-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/s41467-021-20951-9-
dc.identifier.pmid33514706-
dc.identifier.pmcidPMC7846562-
dc.identifier.scopuseid_2-s2.0-85099983175-
dc.identifier.volume12-
dc.identifier.issue1-
dc.identifier.spagearticle no. 709-
dc.identifier.epagearticle no. 709-
dc.identifier.eissn2041-1723-
dc.identifier.isiWOS:000684846200008-
dc.identifier.issnl2041-1723-

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