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Article: Poly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

TitlePoly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes
Authors
Issue Date2007
Citation
Applied Physics Letters, 2007, v. 91, n. 22, article no. 223512 How to Cite?
AbstractA solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly (3, 3 -didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/298411
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Yuan Yuan-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorChen, Fuming-
dc.contributor.authorMhaisalkar, S. G.-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorOng, Beng S.-
dc.contributor.authorWu, Yiliang-
dc.date.accessioned2021-04-08T03:08:22Z-
dc.date.available2021-04-08T03:08:22Z-
dc.date.issued2007-
dc.identifier.citationApplied Physics Letters, 2007, v. 91, n. 22, article no. 223512-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/298411-
dc.description.abstractA solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly (3, 3 -didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor. © 2007 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titlePoly (3, 3''' -didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2806234-
dc.identifier.scopuseid_2-s2.0-36549034213-
dc.identifier.volume91-
dc.identifier.issue22-
dc.identifier.spagearticle no. 223512-
dc.identifier.epagearticle no. 223512-
dc.identifier.isiWOS:000251324600093-
dc.identifier.issnl0003-6951-

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