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Article: Near-field Raman imaging using optically trapped dielectric microsphere

TitleNear-field Raman imaging using optically trapped dielectric microsphere
Authors
Issue Date2008
Citation
Optics Express, 2008, v. 16, n. 11, p. 7976-7984 How to Cite?
AbstractThe stumbling block of employing Raman imaging in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution, among which aperture and apertureless near-field Raman techniques are the most frequently used. In this letter, we report a new approach in doing near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a polystyrene microsphere over the sample surface in water. We have used this technique to resolve PMOS transistors with SiGe source drain stressors with poly-Si gates, as well as gold nanopatterns with excellent reproducibility. ©2008 Optical Society of America.
Persistent Identifierhttp://hdl.handle.net/10722/298418
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKasim, Johnson-
dc.contributor.authorYu, Ting-
dc.contributor.authorYou, Yu Meng-
dc.contributor.authorLiu, Jin Ping-
dc.contributor.authorSee, Alex-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorShen, Ze Xiang-
dc.date.accessioned2021-04-08T03:08:22Z-
dc.date.available2021-04-08T03:08:22Z-
dc.date.issued2008-
dc.identifier.citationOptics Express, 2008, v. 16, n. 11, p. 7976-7984-
dc.identifier.urihttp://hdl.handle.net/10722/298418-
dc.description.abstractThe stumbling block of employing Raman imaging in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution, among which aperture and apertureless near-field Raman techniques are the most frequently used. In this letter, we report a new approach in doing near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a polystyrene microsphere over the sample surface in water. We have used this technique to resolve PMOS transistors with SiGe source drain stressors with poly-Si gates, as well as gold nanopatterns with excellent reproducibility. ©2008 Optical Society of America.-
dc.languageeng-
dc.relation.ispartofOptics Express-
dc.titleNear-field Raman imaging using optically trapped dielectric microsphere-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1364/OE.16.007976-
dc.identifier.pmid18545507-
dc.identifier.scopuseid_2-s2.0-44649089376-
dc.identifier.volume16-
dc.identifier.issue11-
dc.identifier.spage7976-
dc.identifier.epage7984-
dc.identifier.eissn1094-4087-
dc.identifier.isiWOS:000256469900043-
dc.identifier.issnl1094-4087-

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