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Article: Electrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers

TitleElectrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers
Authors
Issue Date2009
Citation
Chemistry of Materials, 2009, v. 21, n. 23, p. 5674-5680 How to Cite?
AbstractUltra large and single-layer graphene oxide sheets (up to millimeter in lateral size) are obtained by a modified Hummers' method, where we replace the first aggressive oxidation process with a short sonication step in H SO solutions. The lateral size of obtained GO sheets can be adjusted by the sonication period: it decreases with the increasing sonication time. The thin-film electrodes made from ultra large reduced GO sheets exhibit lower sheet resistance compared with those from small-size reduced GO sheets. Moreover, the transistor devices made from these single-layer GO sheets after 800 °C thermal reduction exhibit the effective hole mobility ranged between 4 and 12 cm /(V s). Raman spectroscopic results suggest that the enhancement in mobility at a higher-mobility regime is well explained by the graphitization of GO rather than the removal of functional groups. The ratio between the 2D and G peak areas, I(2D)//(G), is well correlated to the effective hole mobility values in reduced GO sheets. © 2009 American Chemical Society. 2 4 2
Persistent Identifierhttp://hdl.handle.net/10722/298432
ISSN
2020 Impact Factor: 9.811
2020 SCImago Journal Rankings: 3.741
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSu, Ching Yuan-
dc.contributor.authorXu, Yanping-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorZhao, Jianwen-
dc.contributor.authorTang, Xiaohong-
dc.contributor.authorTsai, Chuen Horng-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:24Z-
dc.date.available2021-04-08T03:08:24Z-
dc.date.issued2009-
dc.identifier.citationChemistry of Materials, 2009, v. 21, n. 23, p. 5674-5680-
dc.identifier.issn0897-4756-
dc.identifier.urihttp://hdl.handle.net/10722/298432-
dc.description.abstractUltra large and single-layer graphene oxide sheets (up to millimeter in lateral size) are obtained by a modified Hummers' method, where we replace the first aggressive oxidation process with a short sonication step in H SO solutions. The lateral size of obtained GO sheets can be adjusted by the sonication period: it decreases with the increasing sonication time. The thin-film electrodes made from ultra large reduced GO sheets exhibit lower sheet resistance compared with those from small-size reduced GO sheets. Moreover, the transistor devices made from these single-layer GO sheets after 800 °C thermal reduction exhibit the effective hole mobility ranged between 4 and 12 cm /(V s). Raman spectroscopic results suggest that the enhancement in mobility at a higher-mobility regime is well explained by the graphitization of GO rather than the removal of functional groups. The ratio between the 2D and G peak areas, I(2D)//(G), is well correlated to the effective hole mobility values in reduced GO sheets. © 2009 American Chemical Society. 2 4 2-
dc.languageeng-
dc.relation.ispartofChemistry of Materials-
dc.titleElectrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/cm902182y-
dc.identifier.scopuseid_2-s2.0-72949117247-
dc.identifier.volume21-
dc.identifier.issue23-
dc.identifier.spage5674-
dc.identifier.epage5680-
dc.identifier.isiWOS:000272084500019-
dc.identifier.issnl0897-4756-

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