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Article: Electrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers
Title | Electrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers |
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Authors | |
Issue Date | 2009 |
Citation | Chemistry of Materials, 2009, v. 21, n. 23, p. 5674-5680 How to Cite? |
Abstract | Ultra large and single-layer graphene oxide sheets (up to millimeter in lateral size) are obtained by a modified Hummers' method, where we replace the first aggressive oxidation process with a short sonication step in H SO solutions. The lateral size of obtained GO sheets can be adjusted by the sonication period: it decreases with the increasing sonication time. The thin-film electrodes made from ultra large reduced GO sheets exhibit lower sheet resistance compared with those from small-size reduced GO sheets. Moreover, the transistor devices made from these single-layer GO sheets after 800 °C thermal reduction exhibit the effective hole mobility ranged between 4 and 12 cm /(V s). Raman spectroscopic results suggest that the enhancement in mobility at a higher-mobility regime is well explained by the graphitization of GO rather than the removal of functional groups. The ratio between the 2D and G peak areas, I(2D)//(G), is well correlated to the effective hole mobility values in reduced GO sheets. © 2009 American Chemical Society. 2 4 2 |
Persistent Identifier | http://hdl.handle.net/10722/298432 |
ISSN | 2023 Impact Factor: 7.2 2023 SCImago Journal Rankings: 2.421 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Su, Ching Yuan | - |
dc.contributor.author | Xu, Yanping | - |
dc.contributor.author | Zhang, Wenjing | - |
dc.contributor.author | Zhao, Jianwen | - |
dc.contributor.author | Tang, Xiaohong | - |
dc.contributor.author | Tsai, Chuen Horng | - |
dc.contributor.author | Li, Lain Jong | - |
dc.date.accessioned | 2021-04-08T03:08:24Z | - |
dc.date.available | 2021-04-08T03:08:24Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | Chemistry of Materials, 2009, v. 21, n. 23, p. 5674-5680 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298432 | - |
dc.description.abstract | Ultra large and single-layer graphene oxide sheets (up to millimeter in lateral size) are obtained by a modified Hummers' method, where we replace the first aggressive oxidation process with a short sonication step in H SO solutions. The lateral size of obtained GO sheets can be adjusted by the sonication period: it decreases with the increasing sonication time. The thin-film electrodes made from ultra large reduced GO sheets exhibit lower sheet resistance compared with those from small-size reduced GO sheets. Moreover, the transistor devices made from these single-layer GO sheets after 800 °C thermal reduction exhibit the effective hole mobility ranged between 4 and 12 cm /(V s). Raman spectroscopic results suggest that the enhancement in mobility at a higher-mobility regime is well explained by the graphitization of GO rather than the removal of functional groups. The ratio between the 2D and G peak areas, I(2D)//(G), is well correlated to the effective hole mobility values in reduced GO sheets. © 2009 American Chemical Society. 2 4 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Chemistry of Materials | - |
dc.title | Electrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/cm902182y | - |
dc.identifier.scopus | eid_2-s2.0-72949117247 | - |
dc.identifier.volume | 21 | - |
dc.identifier.issue | 23 | - |
dc.identifier.spage | 5674 | - |
dc.identifier.epage | 5680 | - |
dc.identifier.isi | WOS:000272084500019 | - |
dc.identifier.issnl | 0897-4756 | - |