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Article: Mobility enhancement in carbon nanotube transistors by screening charge impurity with silica nanoparticles

TitleMobility enhancement in carbon nanotube transistors by screening charge impurity with silica nanoparticles
Authors
Issue Date2011
Citation
Journal of Physical Chemistry C, 2011, v. 115, n. 14, p. 6975-6979 How to Cite?
AbstractIonic surfactants have been frequently used for nanotube device fabrication owing to their high efficiency in dispersing SWNTs. Surfactants are also widely adopted for state-of-the-art density gradient ultracentrifugation- and dielectrophoresis-based nanotube separation techniques. However, the residual surfactants on nanotubes have been speculated to degrade the electrical performance of SWNT devices. Conventional methods, such as extensive washing or thermal treatment, are not able to efficiently remove the residual surfactants. In this article, we reveal that a thin layer of polydimethylsiloxane (PDMS) containing silica and ionic liquid coated on SWNT network field-effect transistors (FETs) is able to largely enhance the device mobility (about 3-4 times) and suppress their hysteresis. The enhancement in electrical properties of SWNT FETs is due to the screening of residual charges by the silica/liquid ion mixture. © 2011 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/298433
ISSN
2023 Impact Factor: 3.3
2023 SCImago Journal Rankings: 0.957
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhao, Jianwen-
dc.contributor.authorLin, Chengte-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorXu, Yanping-
dc.contributor.authorLee, Chun Wei-
dc.contributor.authorChan-Park, M. B.-
dc.contributor.authorChen, Peng-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:24Z-
dc.date.available2021-04-08T03:08:24Z-
dc.date.issued2011-
dc.identifier.citationJournal of Physical Chemistry C, 2011, v. 115, n. 14, p. 6975-6979-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/10722/298433-
dc.description.abstractIonic surfactants have been frequently used for nanotube device fabrication owing to their high efficiency in dispersing SWNTs. Surfactants are also widely adopted for state-of-the-art density gradient ultracentrifugation- and dielectrophoresis-based nanotube separation techniques. However, the residual surfactants on nanotubes have been speculated to degrade the electrical performance of SWNT devices. Conventional methods, such as extensive washing or thermal treatment, are not able to efficiently remove the residual surfactants. In this article, we reveal that a thin layer of polydimethylsiloxane (PDMS) containing silica and ionic liquid coated on SWNT network field-effect transistors (FETs) is able to largely enhance the device mobility (about 3-4 times) and suppress their hysteresis. The enhancement in electrical properties of SWNT FETs is due to the screening of residual charges by the silica/liquid ion mixture. © 2011 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofJournal of Physical Chemistry C-
dc.titleMobility enhancement in carbon nanotube transistors by screening charge impurity with silica nanoparticles-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp2010056-
dc.identifier.scopuseid_2-s2.0-79953762356-
dc.identifier.volume115-
dc.identifier.issue14-
dc.identifier.spage6975-
dc.identifier.epage6979-
dc.identifier.eissn1932-7455-
dc.identifier.isiWOS:000289215400104-
dc.identifier.issnl1932-7447-

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