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Article: Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2

TitleResonant tunneling through discrete quantum states in stacked atomic-layered MoS<inf>2</inf>
Authors
Keywordsinterlayer electron transport
resonant tunneling
discrete energy levels
nanopore structure
Metal transition dichalcogenide
Issue Date2014
Citation
Nano Letters, 2014, v. 14, n. 5, p. 2381-2386 How to Cite?
AbstractTwo-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect- transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS films were investigated. A trilayered MoS film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties. © 2014 American Chemical Society. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298438
ISSN
2020 Impact Factor: 11.189
2020 SCImago Journal Rankings: 4.853
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorNguyen, Linh Nam-
dc.contributor.authorLan, Yann Wen-
dc.contributor.authorChen, Jyun Hong-
dc.contributor.authorChang, Tay Rong-
dc.contributor.authorZhong, Yuan Liang-
dc.contributor.authorJeng, Horng Tay-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorChen, Chii Dong-
dc.date.accessioned2021-04-08T03:08:25Z-
dc.date.available2021-04-08T03:08:25Z-
dc.date.issued2014-
dc.identifier.citationNano Letters, 2014, v. 14, n. 5, p. 2381-2386-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298438-
dc.description.abstractTwo-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect- transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS films were investigated. A trilayered MoS film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties. © 2014 American Chemical Society. 2 2-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectinterlayer electron transport-
dc.subjectresonant tunneling-
dc.subjectdiscrete energy levels-
dc.subjectnanopore structure-
dc.subjectMetal transition dichalcogenide-
dc.titleResonant tunneling through discrete quantum states in stacked atomic-layered MoS<inf>2</inf>-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl404790n-
dc.identifier.scopuseid_2-s2.0-84900506644-
dc.identifier.volume14-
dc.identifier.issue5-
dc.identifier.spage2381-
dc.identifier.epage2386-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000336074800022-
dc.identifier.issnl1530-6984-

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