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Article: Role of metal contacts in high-performance phototransistors based on WSe2 monolayers

TitleRole of metal contacts in high-performance phototransistors based on WSe<inf>2</inf> monolayers
Authors
Keywords2D material
tungsten diselenide
Schottky barrier
contact effect
photodetector
Issue Date2014
Citation
ACS Nano, 2014, v. 8, n. 8, p. 8653-8661 How to Cite?
AbstractPhototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe ) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe phototransistors exhibit a very high photo gain (10 ) and specific detectivity (10 Jones), values higher than commercial Si- and InGaAs-based photodetectors; however, the response speed is longer than 5 s in ambient air. In contrast, the high Schottky-contact phototransistors display a fast response time shorter than 23 ms, but the photo gain and specific detectivity decrease by several orders of magnitude. Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient air. This study demonstrates that the contact plays an important role in TMD phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity. © 2014 American Chemical Society. 2 2 5 14
Persistent Identifierhttp://hdl.handle.net/10722/298440
ISSN
2020 Impact Factor: 15.881
2020 SCImago Journal Rankings: 5.554

 

DC FieldValueLanguage
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorChiu, Ming Hui-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorChen, Wei-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWee, Andrew Thye Shen-
dc.date.accessioned2021-04-08T03:08:25Z-
dc.date.available2021-04-08T03:08:25Z-
dc.date.issued2014-
dc.identifier.citationACS Nano, 2014, v. 8, n. 8, p. 8653-8661-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298440-
dc.description.abstractPhototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe ) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe phototransistors exhibit a very high photo gain (10 ) and specific detectivity (10 Jones), values higher than commercial Si- and InGaAs-based photodetectors; however, the response speed is longer than 5 s in ambient air. In contrast, the high Schottky-contact phototransistors display a fast response time shorter than 23 ms, but the photo gain and specific detectivity decrease by several orders of magnitude. Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient air. This study demonstrates that the contact plays an important role in TMD phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity. © 2014 American Chemical Society. 2 2 5 14-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subject2D material-
dc.subjecttungsten diselenide-
dc.subjectSchottky barrier-
dc.subjectcontact effect-
dc.subjectphotodetector-
dc.titleRole of metal contacts in high-performance phototransistors based on WSe<inf>2</inf> monolayers-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nn503521c-
dc.identifier.scopuseid_2-s2.0-84906657558-
dc.identifier.volume8-
dc.identifier.issue8-
dc.identifier.spage8653-
dc.identifier.epage8661-
dc.identifier.eissn1936-086X-
dc.identifier.issnl1936-0851-

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