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Article: Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3

TitleIntercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In<inf>2</inf>Se<inf>3</inf>
Authors
Keywordssemiconductor
In Se 2 3
2D materials
switchable diode
ferroelectric
Issue Date2018
Citation
Nano Letters, 2018, v. 18, n. 2, p. 1253-1258 How to Cite?
AbstractEnriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In Se ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In Se exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In Se , a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies. 2 3 2 3 2 3
Persistent Identifierhttp://hdl.handle.net/10722/298448
ISSN
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCui, Chaojie-
dc.contributor.authorHu, Wei Jin-
dc.contributor.authorYan, Xingxu-
dc.contributor.authorAddiego, Christopher-
dc.contributor.authorGao, Wenpei-
dc.contributor.authorWang, Yao-
dc.contributor.authorWang, Zhe-
dc.contributor.authorLi, Linze-
dc.contributor.authorCheng, Yingchun-
dc.contributor.authorLi, Peng-
dc.contributor.authorZhang, Xixiang-
dc.contributor.authorAlshareef, Husam N.-
dc.contributor.authorWu, Tom-
dc.contributor.authorZhu, Wenguang-
dc.contributor.authorPan, Xiaoqing-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:26Z-
dc.date.available2021-04-08T03:08:26Z-
dc.date.issued2018-
dc.identifier.citationNano Letters, 2018, v. 18, n. 2, p. 1253-1258-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/298448-
dc.description.abstractEnriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In Se ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In Se exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In Se , a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies. 2 3 2 3 2 3-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectsemiconductor-
dc.subjectIn Se 2 3-
dc.subject2D materials-
dc.subjectswitchable diode-
dc.subjectferroelectric-
dc.titleIntercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In<inf>2</inf>Se<inf>3</inf>-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acs.nanolett.7b04852-
dc.identifier.pmid29378142-
dc.identifier.scopuseid_2-s2.0-85042097238-
dc.identifier.volume18-
dc.identifier.issue2-
dc.identifier.spage1253-
dc.identifier.epage1258-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000425559700086-
dc.identifier.issnl1530-6984-

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