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Article: Mid-infrared electroluminescence from coupled quantum dots and wells

TitleMid-infrared electroluminescence from coupled quantum dots and wells
Authors
Shields, P. A.Bumby, C. W.Li, L. J.Nicholas, R. J.
Issue Date2004
Citation
Journal of Applied Physics, 2004, v. 96, n. 5, p. 2725-2730 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1776623
AbstractThe room temperature electroluminescence (EL) between 1.7-2.6 μ from coupled quantum dots and quantum wells in the InAs/InSb/GaSb materials system was investigated. The samples which were investigated consisted of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix. It was found that the thickness of the GaSb space layer lowers the energy from that of a quantum well alone. The results reveal the occurrence of a sharp transition after a single monolayer coverage of GaSb either due to structural changes in the quantum dots or from the shrinkage of the quantum well.
Persistent Identifierhttp://hdl.handle.net/10722/298455
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000223719300045

 

DC FieldValueLanguage
dc.contributor.authorShields, P. A.-
dc.contributor.authorBumby, C. W.-
dc.contributor.authorLi, L. J.-
dc.contributor.authorNicholas, R. J.-
dc.date.accessioned2021-04-08T03:08:27Z-
dc.date.available2021-04-08T03:08:27Z-
dc.date.issued2004-
dc.identifier.citationJournal of Applied Physics, 2004, v. 96, n. 5, p. 2725-2730-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/298455-
dc.description.abstractThe room temperature electroluminescence (EL) between 1.7-2.6 μ from coupled quantum dots and quantum wells in the InAs/InSb/GaSb materials system was investigated. The samples which were investigated consisted of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix. It was found that the thickness of the GaSb space layer lowers the energy from that of a quantum well alone. The results reveal the occurrence of a sharp transition after a single monolayer coverage of GaSb either due to structural changes in the quantum dots or from the shrinkage of the quantum well.-
dc.languageeng-
dc.relation.ispartofJournal of Applied Physics-
dc.titleMid-infrared electroluminescence from coupled quantum dots and wells-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1776623-
dc.identifier.scopuseid_2-s2.0-4944263325-
dc.identifier.volume96-
dc.identifier.issue5-
dc.identifier.spage2725-
dc.identifier.epage2730-
dc.identifier.isiWOS:000223719300045-
dc.identifier.issnl0021-8979-

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