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Article: Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles
Title | Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles |
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Authors | |
Issue Date | 2008 |
Citation | Journal of Physical Chemistry C, 2008, v. 112, n. 32, p. 12089-12091 How to Cite? |
Abstract | Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield. © 2008 American Chemical Society. |
Persistent Identifier | http://hdl.handle.net/10722/298456 |
ISSN | 2023 Impact Factor: 3.3 2023 SCImago Journal Rankings: 0.957 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lee, Chun Wei | - |
dc.contributor.author | Weng, Cheng Hui | - |
dc.contributor.author | Wei, Li | - |
dc.contributor.author | Chen, Yuan | - |
dc.contributor.author | Chan-Park, Mary B. | - |
dc.contributor.author | Tsai, Chuen Horng | - |
dc.contributor.author | Leou, Keh Chyang | - |
dc.contributor.author | Poa, C. H.Patrick | - |
dc.contributor.author | Wang, Junling | - |
dc.contributor.author | Li, Lain Jong | - |
dc.date.accessioned | 2021-04-08T03:08:27Z | - |
dc.date.available | 2021-04-08T03:08:27Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | Journal of Physical Chemistry C, 2008, v. 112, n. 32, p. 12089-12091 | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298456 | - |
dc.description.abstract | Reported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield. © 2008 American Chemical Society. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Physical Chemistry C | - |
dc.title | Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/jp805434d | - |
dc.identifier.scopus | eid_2-s2.0-50649083652 | - |
dc.identifier.volume | 112 | - |
dc.identifier.issue | 32 | - |
dc.identifier.spage | 12089 | - |
dc.identifier.epage | 12091 | - |
dc.identifier.eissn | 1932-7455 | - |
dc.identifier.isi | WOS:000258290100007 | - |
dc.identifier.issnl | 1932-7447 | - |