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Article: Toward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles

TitleToward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles
Authors
Issue Date2008
Citation
Journal of Physical Chemistry C, 2008, v. 112, n. 32, p. 12089-12091 How to Cite?
AbstractReported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield. © 2008 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/298456
ISSN
2020 Impact Factor: 4.126
2020 SCImago Journal Rankings: 1.401

 

DC FieldValueLanguage
dc.contributor.authorLee, Chun Wei-
dc.contributor.authorWeng, Cheng Hui-
dc.contributor.authorWei, Li-
dc.contributor.authorChen, Yuan-
dc.contributor.authorChan-Park, Mary B.-
dc.contributor.authorTsai, Chuen Horng-
dc.contributor.authorLeou, Keh Chyang-
dc.contributor.authorPoa, C. H.Patrick-
dc.contributor.authorWang, Junling-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:27Z-
dc.date.available2021-04-08T03:08:27Z-
dc.date.issued2008-
dc.identifier.citationJournal of Physical Chemistry C, 2008, v. 112, n. 32, p. 12089-12091-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/10722/298456-
dc.description.abstractReported solution-processed field-effect transistor (FET) devices based on single-walled carbon nanotube (SWNT) networks have either high mobility but low on/off ratio or vice versa. Recently, Arnold et al. (Nat. Nanotechnol. 2006, 1, 60-65) have made significant improvements in obtaining semiconductor-enriched SWNTs by using density-gradient ultracentrifugation. Here, we report that removing the SWNT bundles using organic - aqueous interfacial purification can further enhance the electrical performance of SWNT-FETs. The on/off ratio of the SWNT-FET is improved by ∼1 order of magnitude. By combining density-gradient ultracentrifugation and interfacial purification, it is possible to obtain high on/off ratio and high mobility of solution-processed SWNT-FETs at a promising yield. © 2008 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofJournal of Physical Chemistry C-
dc.titleToward high-performance solution-processed carbon nanotube network transistors by removing nanotube bundles-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp805434d-
dc.identifier.scopuseid_2-s2.0-50649083652-
dc.identifier.volume112-
dc.identifier.issue32-
dc.identifier.spage12089-
dc.identifier.epage12091-
dc.identifier.eissn1932-7455-
dc.identifier.issnl1932-7447-

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