Charge injection at carbon nanotube- SiO<inf>2</inf> interface

Abstract

Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. © 2008 American Institute of Physics.