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Article: Charge injection at carbon nanotube- SiO2 interface

TitleCharge injection at carbon nanotube- SiO<inf>2</inf> interface
Authors
Issue Date2008
Citation
Applied Physics Letters, 2008, v. 93, n. 9, article no. 093509 How to Cite?
AbstractMost single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/298457
ISSN
2020 Impact Factor: 3.791
2020 SCImago Journal Rankings: 1.182

 

DC FieldValueLanguage
dc.contributor.authorOng, Hock Guan-
dc.contributor.authorCheah, Jun Wei-
dc.contributor.authorChen, Lang-
dc.contributor.authorTangtang, Hosea-
dc.contributor.authorXu, Yanping-
dc.contributor.authorLi, Bing-
dc.contributor.authorZhang, Hua-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWang, Junling-
dc.date.accessioned2021-04-08T03:08:27Z-
dc.date.available2021-04-08T03:08:27Z-
dc.date.issued2008-
dc.identifier.citationApplied Physics Letters, 2008, v. 93, n. 9, article no. 093509-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/298457-
dc.description.abstractMost single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied the charge injection and subsequent discharging processes at the carbon nanotube- SiO2 interface using electrostatic force microscopy. It was observed that the water layer assists charge diffusion on the dielectric surface. © 2008 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleCharge injection at carbon nanotube- SiO<inf>2</inf> interface-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2978249-
dc.identifier.scopuseid_2-s2.0-51349138287-
dc.identifier.volume93-
dc.identifier.issue9-
dc.identifier.spagearticle no. 093509-
dc.identifier.epagearticle no. 093509-
dc.identifier.issnl0003-6951-

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