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Article: N -type behavior of ferroelectric-gate carbon nanotube network transistor

TitleN -type behavior of ferroelectric-gate carbon nanotube network transistor
Authors
Issue Date2008
Citation
Applied Physics Letters, 2008, v. 93, n. 8, article no. 082103 How to Cite?
AbstractCarbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/298458
ISSN
2020 Impact Factor: 3.791
2020 SCImago Journal Rankings: 1.182

 

DC FieldValueLanguage
dc.contributor.authorCheah, Jun Wei-
dc.contributor.authorShi, Yumeng-
dc.contributor.authorOng, Hock Guan-
dc.contributor.authorLee, Chun Wei-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWang, Junling-
dc.date.accessioned2021-04-08T03:08:28Z-
dc.date.available2021-04-08T03:08:28Z-
dc.date.issued2008-
dc.identifier.citationApplied Physics Letters, 2008, v. 93, n. 8, article no. 082103-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/298458-
dc.description.abstractCarbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface. © 2008 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleN -type behavior of ferroelectric-gate carbon nanotube network transistor-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2975158-
dc.identifier.scopuseid_2-s2.0-51349139859-
dc.identifier.volume93-
dc.identifier.issue8-
dc.identifier.spagearticle no. 082103-
dc.identifier.epagearticle no. 082103-
dc.identifier.issnl0003-6951-

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