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Article: Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

TitleIllumination-enhanced hysteresis of transistors based on carbon nanotube networks
Authors
Issue Date2009
Citation
Journal of Physical Chemistry C, 2009, v. 113, n. 12, p. 4745-4747 How to Cite?
AbstractThe hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO surfaces. © 2009 American Chemical Society. 2 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298478
ISSN
2020 Impact Factor: 4.126
2020 SCImago Journal Rankings: 1.401

 

DC FieldValueLanguage
dc.contributor.authorLee, Chun Wei-
dc.contributor.authorDong, Xiaochen-
dc.contributor.authorGoh, Seok Hong-
dc.contributor.authorWang, Junling-
dc.contributor.authorWei, Jun-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:31Z-
dc.date.available2021-04-08T03:08:31Z-
dc.date.issued2009-
dc.identifier.citationJournal of Physical Chemistry C, 2009, v. 113, n. 12, p. 4745-4747-
dc.identifier.issn1932-7447-
dc.identifier.urihttp://hdl.handle.net/10722/298478-
dc.description.abstractThe hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO surfaces. © 2009 American Chemical Society. 2 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofJournal of Physical Chemistry C-
dc.titleIllumination-enhanced hysteresis of transistors based on carbon nanotube networks-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp811006r-
dc.identifier.scopuseid_2-s2.0-65249188723-
dc.identifier.volume113-
dc.identifier.issue12-
dc.identifier.spage4745-
dc.identifier.epage4747-
dc.identifier.eissn1932-7455-
dc.identifier.issnl1932-7447-

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