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Article: Solution-processable carbon nanotubes for semiconducting thin-film transistor devices

TitleSolution-processable carbon nanotubes for semiconducting thin-film transistor devices
Authors
Lee, Chun WeiHan, XuandingChen, FumingWei, JunChen, YuanChan-Park, Mary B.Li, Lain Jong
Issue Date2010
Citation
Advanced Materials, 2010, v. 22, n. 11, p. 1278-1282 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.200902461
Abstract(Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm V s while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics. © 2010 WILEY-VCH Verlag GmbH &, Co. KGaA. 2 -1 -1
Persistent Identifierhttp://hdl.handle.net/10722/298492
ISSN
0935-9648
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID
WOS:000276056500016

 

DC FieldValueLanguage
dc.contributor.authorLee, Chun Wei-
dc.contributor.authorHan, Xuanding-
dc.contributor.authorChen, Fuming-
dc.contributor.authorWei, Jun-
dc.contributor.authorChen, Yuan-
dc.contributor.authorChan-Park, Mary B.-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:36Z-
dc.date.available2021-04-08T03:08:36Z-
dc.date.issued2010-
dc.identifier.citationAdvanced Materials, 2010, v. 22, n. 11, p. 1278-1282-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/298492-
dc.description.abstract(Figure Presented) CoMoCat single-walled carbon nanotubes (SWNTs) treated with diazonium salts can be used to fabricate solution-processable field-effect transistors (FETs) with a full semiconductor device yield. By increasing the network thickness, the effective mobility of the devices can be raised to ∼10 cm V s while keeping the on-off ratio higher than 5000. The removal of impurities is essential to achieve high-on-off-ratio devices. This approach is promising for preparation of SWNT inks for printing high-performance devices in flexible electronics. © 2010 WILEY-VCH Verlag GmbH &, Co. KGaA. 2 -1 -1-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.titleSolution-processable carbon nanotubes for semiconducting thin-film transistor devices-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.200902461-
dc.identifier.pmid20437519-
dc.identifier.scopuseid_2-s2.0-77950274613-
dc.identifier.volume22-
dc.identifier.issue11-
dc.identifier.spage1278-
dc.identifier.epage1282-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000276056500016-
dc.identifier.issnl0935-9648-

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