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Article: Highly efficient restoration of graphitic structure in graphene oxide using alcohol vapors

TitleHighly efficient restoration of graphitic structure in graphene oxide using alcohol vapors
Authors
Keywordstransistors
Raman spectroscopy
graphene oxide
transparent conducting electrodes
Issue Date2010
Citation
ACS Nano, 2010, v. 4, n. 9, p. 5285-5292 How to Cite?
AbstractSolution-based processes involving the chemical oxidation of graphite and reduction of the obtained graphene oxide (GO) sheets have attracted much attention for preparing graphene films for printed electronics and biosensors. However, the low electrical conductivity of reduced GO is still hindering the development of electronic applications. This article presents that GO sheets reduced by high-temperature alcohol vapors exhibit highly graphitic structures and excellent electrical conductivity. The sheet resistance of thin transparent films is lowered to ∼15 kω/□ (>96% transparency). Field-effect transistors produced from these reduced GO sheets exhibit high effective field-effect hole mobility up to 210 cm /V·s. Raman spectroscopic studies reveal that the conductivity enhancement in the low mobility regime is attributed to the removal of chemical functional groups and the formation of six-fold rings. In the high mobility regime, the growth of the graphitic domain size becomes dominant for enhancing its electrical conductivity. The excellent electrical conductivity of the reduced GO sheets promises potential electronic applications. © 2010 American Chemical Society. 2
Persistent Identifierhttp://hdl.handle.net/10722/298508
ISSN
2020 Impact Factor: 15.881
2020 SCImago Journal Rankings: 5.554
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSu, Ching Yuan-
dc.contributor.authorXu, Yanping-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorZhao, Jianwen-
dc.contributor.authorLiu, Aiping-
dc.contributor.authorTang, Xiaohong-
dc.contributor.authorTsai, Chuen Horng-
dc.contributor.authorHuang, Yizhong-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:39Z-
dc.date.available2021-04-08T03:08:39Z-
dc.date.issued2010-
dc.identifier.citationACS Nano, 2010, v. 4, n. 9, p. 5285-5292-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298508-
dc.description.abstractSolution-based processes involving the chemical oxidation of graphite and reduction of the obtained graphene oxide (GO) sheets have attracted much attention for preparing graphene films for printed electronics and biosensors. However, the low electrical conductivity of reduced GO is still hindering the development of electronic applications. This article presents that GO sheets reduced by high-temperature alcohol vapors exhibit highly graphitic structures and excellent electrical conductivity. The sheet resistance of thin transparent films is lowered to ∼15 kω/□ (>96% transparency). Field-effect transistors produced from these reduced GO sheets exhibit high effective field-effect hole mobility up to 210 cm /V·s. Raman spectroscopic studies reveal that the conductivity enhancement in the low mobility regime is attributed to the removal of chemical functional groups and the formation of six-fold rings. In the high mobility regime, the growth of the graphitic domain size becomes dominant for enhancing its electrical conductivity. The excellent electrical conductivity of the reduced GO sheets promises potential electronic applications. © 2010 American Chemical Society. 2-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjecttransistors-
dc.subjectRaman spectroscopy-
dc.subjectgraphene oxide-
dc.subjecttransparent conducting electrodes-
dc.titleHighly efficient restoration of graphitic structure in graphene oxide using alcohol vapors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nn101691m-
dc.identifier.pmid20718442-
dc.identifier.scopuseid_2-s2.0-77957315053-
dc.identifier.volume4-
dc.identifier.issue9-
dc.identifier.spage5285-
dc.identifier.epage5292-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000282121000042-
dc.identifier.issnl1936-0851-

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