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Conference Paper: Scalable nanoimprint patterning of thin graphitic oxide sheets and in situ reduction

TitleScalable nanoimprint patterning of thin graphitic oxide sheets and in situ reduction
Authors
Issue Date2011
Citation
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 2011, v. 29, n. 1, article no. 011023 How to Cite?
AbstractThis article presents a scalable technique to precisely deposit and pattern graphitic oxide (GO) flakes onto a SiO /Si or glass substrate. A blanket coating of GO was first applied from a colloidal solution onto an amine-functionalized SiO /Si substrate. The amine termination was used to enhance the adhesion of GO sheets to the substrate. A poly(methyl methacrylate) (PMMA) etch mask was patterned via nanoimprint lithography on top of the GO coating. An oxygen plasma etch was then used to remove GO from areas unprotected by the PMMA mask. The PMMA mask was then dissolved by solvent lift-off technique leaving behind GO lines. GO lines down to 250 nm have been demonstrated. Reduction in hydrazine, followed by annealing in hydrogen ambient, increases the conductivity of the patterned GO lines. This technique can enable large-scale fabrication of electronic devices and sensors based on patterned GO sheets. © 2011 American Vacuum Society. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298516
ISSN
2021 Impact Factor: 1.572
2020 SCImago Journal Rankings: 0.429
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLee, Yeong Yuh-
dc.contributor.authorChong, Karen S.L.-
dc.contributor.authorGoh, Seok Hong-
dc.contributor.authorNg, Andrew M.H.-
dc.contributor.authorKunnavakkam, Madanagopal V.-
dc.contributor.authorHee, Chiou Liu-
dc.contributor.authorXu, Yanping-
dc.contributor.authorTantang, Hosea-
dc.contributor.authorSu, Ching Yuan-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:40Z-
dc.date.available2021-04-08T03:08:40Z-
dc.date.issued2011-
dc.identifier.citationJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 2011, v. 29, n. 1, article no. 011023-
dc.identifier.issn2166-2746-
dc.identifier.urihttp://hdl.handle.net/10722/298516-
dc.description.abstractThis article presents a scalable technique to precisely deposit and pattern graphitic oxide (GO) flakes onto a SiO /Si or glass substrate. A blanket coating of GO was first applied from a colloidal solution onto an amine-functionalized SiO /Si substrate. The amine termination was used to enhance the adhesion of GO sheets to the substrate. A poly(methyl methacrylate) (PMMA) etch mask was patterned via nanoimprint lithography on top of the GO coating. An oxygen plasma etch was then used to remove GO from areas unprotected by the PMMA mask. The PMMA mask was then dissolved by solvent lift-off technique leaving behind GO lines. GO lines down to 250 nm have been demonstrated. Reduction in hydrazine, followed by annealing in hydrogen ambient, increases the conductivity of the patterned GO lines. This technique can enable large-scale fabrication of electronic devices and sensors based on patterned GO sheets. © 2011 American Vacuum Society. 2 2-
dc.languageeng-
dc.relation.ispartofJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics-
dc.titleScalable nanoimprint patterning of thin graphitic oxide sheets and in situ reduction-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.3533936-
dc.identifier.scopuseid_2-s2.0-79551641158-
dc.identifier.volume29-
dc.identifier.issue1-
dc.identifier.spagearticle no. 011023-
dc.identifier.epagearticle no. 011023-
dc.identifier.eissn2166-2754-
dc.identifier.isiWOS:000286679400026-
dc.identifier.issnl2166-2746-

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