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Article: High-quality thin graphene films from fast electrochemical exfoliation

TitleHigh-quality thin graphene films from fast electrochemical exfoliation
Authors
Keywordsgraphene
electrochemical exfoliation
field-effect transistor
transparent conductive film
Raman spectroscopy
Issue Date2011
Citation
ACS Nano, 2011, v. 5, n. 3, p. 2332-2339 How to Cite?
AbstractFlexible and ultratransparent conductors based on graphene sheets have been considered as one promising candidate for replacing currently used indium tin oxide films that are unlikely to satisfy future needs due to their increasing cost and losses in conductivity on bending. Here we demonstrate a simple and fast electrochemical method to exfoliate graphite into thin graphene sheets, mainly AB-stacked bilayered graphene with a large lateral size (several to several tens of micrometers). The electrical properties of these exfoliated sheets are readily superior to commonly used reduced graphene oxide, which preparation typically requires many steps including oxidation of graphite and high temperature reduction. These graphene sheets dissolve in dimethyl formamide (DMF), and they can self-aggregate at air-DMF interfaces after adding water as an antisolvent due to their strong surface hydrophobicity. Interestingly, the continuous films obtained exhibit ultratransparency (∼96% transmittance), and their sheet resistance is <1k σ/sq after a simple HNO treatment, superior to those based on reduced graphene oxide or graphene sheets by other exfoliation methods. Raman and STM characterizations corroborate that the graphene sheets exfoliated by our electrochemical method preserve the intrinsic structure of graphene. © 2011 American Chemical Society. 3
Persistent Identifierhttp://hdl.handle.net/10722/298521
ISSN
2023 Impact Factor: 15.8
2023 SCImago Journal Rankings: 4.593
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSu, Ching Yuan-
dc.contributor.authorLu, Ang Yu-
dc.contributor.authorXu, Yanping-
dc.contributor.authorChen, Fu Rong-
dc.contributor.authorKhlobystov, Andrei N.-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:41Z-
dc.date.available2021-04-08T03:08:41Z-
dc.date.issued2011-
dc.identifier.citationACS Nano, 2011, v. 5, n. 3, p. 2332-2339-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/298521-
dc.description.abstractFlexible and ultratransparent conductors based on graphene sheets have been considered as one promising candidate for replacing currently used indium tin oxide films that are unlikely to satisfy future needs due to their increasing cost and losses in conductivity on bending. Here we demonstrate a simple and fast electrochemical method to exfoliate graphite into thin graphene sheets, mainly AB-stacked bilayered graphene with a large lateral size (several to several tens of micrometers). The electrical properties of these exfoliated sheets are readily superior to commonly used reduced graphene oxide, which preparation typically requires many steps including oxidation of graphite and high temperature reduction. These graphene sheets dissolve in dimethyl formamide (DMF), and they can self-aggregate at air-DMF interfaces after adding water as an antisolvent due to their strong surface hydrophobicity. Interestingly, the continuous films obtained exhibit ultratransparency (∼96% transmittance), and their sheet resistance is <1k σ/sq after a simple HNO treatment, superior to those based on reduced graphene oxide or graphene sheets by other exfoliation methods. Raman and STM characterizations corroborate that the graphene sheets exfoliated by our electrochemical method preserve the intrinsic structure of graphene. © 2011 American Chemical Society. 3-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.subjectgraphene-
dc.subjectelectrochemical exfoliation-
dc.subjectfield-effect transistor-
dc.subjecttransparent conductive film-
dc.subjectRaman spectroscopy-
dc.titleHigh-quality thin graphene films from fast electrochemical exfoliation-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nn200025p-
dc.identifier.pmid21309565-
dc.identifier.scopuseid_2-s2.0-79952911747-
dc.identifier.volume5-
dc.identifier.issue3-
dc.identifier.spage2332-
dc.identifier.epage2339-
dc.identifier.eissn1936-086X-
dc.identifier.isiWOS:000288570600094-
dc.identifier.issnl1936-0851-

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