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Article: Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

TitleOrigin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor
Authors
Ong, H. G.Cheah, J. W.Zou, X.Li, B.Cao, X. H.Tantang, H.Li, L. J.Zhang, H.Han, G. C.Wang, J.
Issue Date2011
Citation
Journal of Physics D: Applied Physics, 2011, v. 44, n. 28, article no. 285301 How to Cite?
DOI: http://dx.doi.org/10.1088/0022-3727/44/28/285301
AbstractUsing electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues. © 2011 IOP Publishing Ltd. 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298529
ISSN
0022-3727
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.681
ISI Accession Number ID
WOS:000292090400011

 

DC FieldValueLanguage
dc.contributor.authorOng, H. G.-
dc.contributor.authorCheah, J. W.-
dc.contributor.authorZou, X.-
dc.contributor.authorLi, B.-
dc.contributor.authorCao, X. H.-
dc.contributor.authorTantang, H.-
dc.contributor.authorLi, L. J.-
dc.contributor.authorZhang, H.-
dc.contributor.authorHan, G. C.-
dc.contributor.authorWang, J.-
dc.date.accessioned2021-04-08T03:08:42Z-
dc.date.available2021-04-08T03:08:42Z-
dc.date.issued2011-
dc.identifier.citationJournal of Physics D: Applied Physics, 2011, v. 44, n. 28, article no. 285301-
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/10722/298529-
dc.description.abstractUsing electrostatic force microscopy, we show direct evidence of charge injection at the carbon nanotube-SiO interface leading to the appearance of hysteresis. The dynamic screening effect of the injected charges is revealed step by step. Further temperature dependent tests also demonstrate the effect of SiO surface chemistry. Furthermore, we conclude that it is not practical to use such a device for memory application because of data retention and storage density issues. © 2011 IOP Publishing Ltd. 2 2-
dc.languageeng-
dc.relation.ispartofJournal of Physics D: Applied Physics-
dc.titleOrigin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0022-3727/44/28/285301-
dc.identifier.scopuseid_2-s2.0-79960240910-
dc.identifier.volume44-
dc.identifier.issue28-
dc.identifier.spagearticle no. 285301-
dc.identifier.epagearticle no. 285301-
dc.identifier.eissn1361-6463-
dc.identifier.isiWOS:000292090400011-
dc.identifier.issnl0022-3727-

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