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Article: Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition

TitleSynthesis of large-area MoS <inf>2</inf> atomic layers with chemical vapor deposition
Authors
Keywordschemical vapor deposition
field-effect transistors
molybdenum disulfide
layered materials
Issue Date2012
Citation
Advanced Materials, 2012, v. 24, n. 17, p. 2320-2325 How to Cite?
AbstractLarge-area MoS atomic layers are synthesized on SiO substrates by chemical vapor deposition using MoO and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS monolayer. The TEM images verify that the synthesized MoS sheets are highly crystalline. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 3 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298557
ISSN
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLee, Yi Hsien-
dc.contributor.authorZhang, Xin Quan-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorChang, Mu Tung-
dc.contributor.authorLin, Cheng Te-
dc.contributor.authorChang, Kai Di-
dc.contributor.authorYu, Ya Chu-
dc.contributor.authorWang, Jacob Tse Wei-
dc.contributor.authorChang, Chia Seng-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLin, Tsung Wu-
dc.date.accessioned2021-04-08T03:08:45Z-
dc.date.available2021-04-08T03:08:45Z-
dc.date.issued2012-
dc.identifier.citationAdvanced Materials, 2012, v. 24, n. 17, p. 2320-2325-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/298557-
dc.description.abstractLarge-area MoS atomic layers are synthesized on SiO substrates by chemical vapor deposition using MoO and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS monolayer. The TEM images verify that the synthesized MoS sheets are highly crystalline. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 3 2 2-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectchemical vapor deposition-
dc.subjectfield-effect transistors-
dc.subjectmolybdenum disulfide-
dc.subjectlayered materials-
dc.titleSynthesis of large-area MoS <inf>2</inf> atomic layers with chemical vapor deposition-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201104798-
dc.identifier.pmid22467187-
dc.identifier.scopuseid_2-s2.0-84860329324-
dc.identifier.volume24-
dc.identifier.issue17-
dc.identifier.spage2320-
dc.identifier.epage2325-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000303117900019-
dc.identifier.issnl0935-9648-

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