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Article: Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition

TitleSynthesis of large-area MoS <inf>2</inf> atomic layers with chemical vapor deposition
Authors
Lee, Yi HsienZhang, Xin QuanZhang, WenjingChang, Mu TungLin, Cheng TeChang, Kai DiYu, Ya ChuWang, Jacob Tse WeiChang, Chia SengLi, Lain JongLin, Tsung Wu
Keywordschemical vapor deposition
field-effect transistors
molybdenum disulfide
layered materials
Issue Date2012
Citation
Advanced Materials, 2012, v. 24, n. 17, p. 2320-2325 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.201104798
AbstractLarge-area MoS atomic layers are synthesized on SiO substrates by chemical vapor deposition using MoO and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS monolayer. The TEM images verify that the synthesized MoS sheets are highly crystalline. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 3 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298557
ISSN
0935-9648
2021 Impact Factor: 32.086
2020 SCImago Journal Rankings: 10.707
ISI Accession Number ID
WOS:000303117900019

 

DC FieldValueLanguage
dc.contributor.authorLee, Yi Hsien-
dc.contributor.authorZhang, Xin Quan-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorChang, Mu Tung-
dc.contributor.authorLin, Cheng Te-
dc.contributor.authorChang, Kai Di-
dc.contributor.authorYu, Ya Chu-
dc.contributor.authorWang, Jacob Tse Wei-
dc.contributor.authorChang, Chia Seng-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLin, Tsung Wu-
dc.date.accessioned2021-04-08T03:08:45Z-
dc.date.available2021-04-08T03:08:45Z-
dc.date.issued2012-
dc.identifier.citationAdvanced Materials, 2012, v. 24, n. 17, p. 2320-2325-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/298557-
dc.description.abstractLarge-area MoS atomic layers are synthesized on SiO substrates by chemical vapor deposition using MoO and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS monolayer. The TEM images verify that the synthesized MoS sheets are highly crystalline. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 3 2 2-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectchemical vapor deposition-
dc.subjectfield-effect transistors-
dc.subjectmolybdenum disulfide-
dc.subjectlayered materials-
dc.titleSynthesis of large-area MoS <inf>2</inf> atomic layers with chemical vapor deposition-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201104798-
dc.identifier.pmid22467187-
dc.identifier.scopuseid_2-s2.0-84860329324-
dc.identifier.volume24-
dc.identifier.issue17-
dc.identifier.spage2320-
dc.identifier.epage2325-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000303117900019-
dc.identifier.issnl0935-9648-

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