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Article: Converting graphene oxide monolayers into boron carbonitride nanosheets by substitutional doping

TitleConverting graphene oxide monolayers into boron carbonitride nanosheets by substitutional doping
Authors
Keywordsdoping
transistors
nanosheets
graphene
boron nitride
Issue Date2012
Citation
Small, 2012, v. 8, n. 9, p. 1384-1391 How to Cite?
AbstractTo realize graphene-based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride (h-BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B O and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN-doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN-doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN-doped graphene nanosheets that may be useful for various optoelectronic applications. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 3
Persistent Identifierhttp://hdl.handle.net/10722/298558
ISSN
2023 Impact Factor: 13.0
2023 SCImago Journal Rankings: 3.348
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLin, Tsung Wu-
dc.contributor.authorSu, Ching Yuan-
dc.contributor.authorZhang, Xin Quan-
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorLee, Yi Hsien-
dc.contributor.authorChu, Chih Wei-
dc.contributor.authorLin, Hsin Yu-
dc.contributor.authorChang, Mu Tung-
dc.contributor.authorChen, Fu Rong-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:45Z-
dc.date.available2021-04-08T03:08:45Z-
dc.date.issued2012-
dc.identifier.citationSmall, 2012, v. 8, n. 9, p. 1384-1391-
dc.identifier.issn1613-6810-
dc.identifier.urihttp://hdl.handle.net/10722/298558-
dc.description.abstractTo realize graphene-based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride (h-BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B O and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN-doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN-doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN-doped graphene nanosheets that may be useful for various optoelectronic applications. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 3-
dc.languageeng-
dc.relation.ispartofSmall-
dc.subjectdoping-
dc.subjecttransistors-
dc.subjectnanosheets-
dc.subjectgraphene-
dc.subjectboron nitride-
dc.titleConverting graphene oxide monolayers into boron carbonitride nanosheets by substitutional doping-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/smll.201101927-
dc.identifier.scopuseid_2-s2.0-84860571079-
dc.identifier.volume8-
dc.identifier.issue9-
dc.identifier.spage1384-
dc.identifier.epage1391-
dc.identifier.eissn1613-6829-
dc.identifier.isiWOS:000303445400014-
dc.identifier.issnl1613-6810-

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