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Article: High-gain phototransistors based on a CVD MoS2 monolayer

TitleHigh-gain phototransistors based on a CVD MoS<inf>2</inf> monolayer
Authors
Zhang, WenjingHuang, Jing KaiChen, Chang HsiaoChang, Yung HuangCheng, Yuh JenLi, Lain Jong
Keywordsphotogain
ambient air
phototransistors
molybdenum disulfides
Issue Date2013
Citation
Advanced Materials, 2013, v. 25, n. 25, p. 3456-3461 How to Cite?
DOI: http://dx.doi.org/10.1002/adma.201301244
AbstractA phototransistor based on a chemical vapor deposited (CVD) MoS monolayer exhibits a high photoresponsivity (2200 A W ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS , decreasing the carrier mobility, photoresponsivity, and photogain. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 -1
Persistent Identifierhttp://hdl.handle.net/10722/298588
ISSN
0935-9648
2023 Impact Factor: 27.4
2023 SCImago Journal Rankings: 9.191
ISI Accession Number ID
WOS:000322568400011

 

DC FieldValueLanguage
dc.contributor.authorZhang, Wenjing-
dc.contributor.authorHuang, Jing Kai-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorChang, Yung Huang-
dc.contributor.authorCheng, Yuh Jen-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:49Z-
dc.date.available2021-04-08T03:08:49Z-
dc.date.issued2013-
dc.identifier.citationAdvanced Materials, 2013, v. 25, n. 25, p. 3456-3461-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/298588-
dc.description.abstractA phototransistor based on a chemical vapor deposited (CVD) MoS monolayer exhibits a high photoresponsivity (2200 A W ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS , decreasing the carrier mobility, photoresponsivity, and photogain. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2 2 -1-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectphotogain-
dc.subjectambient air-
dc.subjectphototransistors-
dc.subjectmolybdenum disulfides-
dc.titleHigh-gain phototransistors based on a CVD MoS<inf>2</inf> monolayer-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201301244-
dc.identifier.pmid23703933-
dc.identifier.scopuseid_2-s2.0-84879691489-
dc.identifier.volume25-
dc.identifier.issue25-
dc.identifier.spage3456-
dc.identifier.epage3461-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000322568400011-
dc.identifier.issnl0935-9648-

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