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Article: Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

TitleRecent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques
Authors
Issue Date2015
Citation
Chemical Society Reviews, 2015, v. 44, n. 9, p. 2744-2756 How to Cite?
AbstractIn recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX , where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS , MoSe , WSe and WS have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches. 2 2 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298592
ISSN
2023 Impact Factor: 40.4
2023 SCImago Journal Rankings: 12.511
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorShi, Yumeng-
dc.contributor.authorLi, Henan-
dc.contributor.authorLi, Lain Jong-
dc.date.accessioned2021-04-08T03:08:49Z-
dc.date.available2021-04-08T03:08:49Z-
dc.date.issued2015-
dc.identifier.citationChemical Society Reviews, 2015, v. 44, n. 9, p. 2744-2756-
dc.identifier.issn0306-0012-
dc.identifier.urihttp://hdl.handle.net/10722/298592-
dc.description.abstractIn recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX , where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS , MoSe , WSe and WS have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches. 2 2 2 2 2-
dc.languageeng-
dc.relation.ispartofChemical Society Reviews-
dc.titleRecent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/c4cs00256c-
dc.identifier.scopuseid_2-s2.0-84946164372-
dc.identifier.volume44-
dc.identifier.issue9-
dc.identifier.spage2744-
dc.identifier.epage2756-
dc.identifier.eissn1460-4744-
dc.identifier.isiWOS:000353658000012-
dc.identifier.issnl0306-0012-

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