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Conference Paper: Magnetization of Cu-doped ZnO film structure modulated by Cu+/Cu2+ oxidation state occupancy: A possible mechanism for voltage control magnetism

TitleMagnetization of Cu-doped ZnO film structure modulated by Cu+/Cu2+ oxidation state occupancy: A possible mechanism for voltage control magnetism
Authors
Ling, FCCYOUNAS, MAzeem, WXu, CWang, MAOZhou, SQ
Issue Date2019
Citation
The 19th International Conference on II-VI Compounds and Related Materials, Zhengzhou, China, 27-31 October 2019 How to Cite?
DescriptionInvited talk
Hosted by Zhengzhou University and Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Persistent Identifierhttp://hdl.handle.net/10722/300507

 

DC FieldValueLanguage
dc.contributor.authorLing, FCC-
dc.contributor.authorYOUNAS, M-
dc.contributor.authorAzeem, W-
dc.contributor.authorXu, C-
dc.contributor.authorWang, MAO-
dc.contributor.authorZhou, SQ-
dc.date.accessioned2021-06-18T02:00:27Z-
dc.date.available2021-06-18T02:00:27Z-
dc.date.issued2019-
dc.identifier.citationThe 19th International Conference on II-VI Compounds and Related Materials, Zhengzhou, China, 27-31 October 2019-
dc.identifier.urihttp://hdl.handle.net/10722/300507-
dc.descriptionInvited talk-
dc.descriptionHosted by Zhengzhou University and Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences-
dc.languageeng-
dc.relation.ispartofThe 19th International Conference on II-VI Compounds and Related Materials-
dc.titleMagnetization of Cu-doped ZnO film structure modulated by Cu+/Cu2+ oxidation state occupancy: A possible mechanism for voltage control magnetism-
dc.typeConference_Paper-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.identifier.hkuros312559-

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