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Article: Strain-engineered black arsenene as a promising gas sensor for detecting SO2 among SF6 decompositions

TitleStrain-engineered black arsenene as a promising gas sensor for detecting SO2 among SF6 decompositions
Authors
Keywordsblack arsenene
electric field
gas sensor
SF6decompositions
SO2adsorption
Issue Date2020
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2020, v. 32 n. 6, p. article no. 065501 How to Cite?
AbstractThe adsorption and gas sensing properties of black arsenene (B-As) regarding sulfur hexafluoride (SF6) and its six decompositions (SOF2, SO2F2, SO2, H2S, HF, and CF4) are investigated using density functional theory combined with the nonequilibrium Green's function. The sensitivity of B-As is evaluated by considering the most stable adsorption configuration, adsorption energy, work function, recovery time, local density of states, and charge transfer between the gas molecules and B-As. It is demonstrated that B-As is more sensitive to the SO2 molecule than to the other decompositions. Additionally, the adsorption strength can be manipulated by controlling the external electric field (E-field). The application of tensile biaxial strain results in more isotropic electrical conductance of B-As, and it can also effectively enhance the response toward SO2. For example, under a 1% equibiaxial tensile strain, a 132% response can be obtained along the zigzag direction. This work suggests the promising prospects of B-As-based gas sensors for detecting SO2 among SF6 decompositions.
Persistent Identifierhttp://hdl.handle.net/10722/300594
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMAO, J-
dc.contributor.authorChen, Y-
dc.date.accessioned2021-06-18T14:54:14Z-
dc.date.available2021-06-18T14:54:14Z-
dc.date.issued2020-
dc.identifier.citationNanotechnology, 2020, v. 32 n. 6, p. article no. 065501-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10722/300594-
dc.description.abstractThe adsorption and gas sensing properties of black arsenene (B-As) regarding sulfur hexafluoride (SF6) and its six decompositions (SOF2, SO2F2, SO2, H2S, HF, and CF4) are investigated using density functional theory combined with the nonequilibrium Green's function. The sensitivity of B-As is evaluated by considering the most stable adsorption configuration, adsorption energy, work function, recovery time, local density of states, and charge transfer between the gas molecules and B-As. It is demonstrated that B-As is more sensitive to the SO2 molecule than to the other decompositions. Additionally, the adsorption strength can be manipulated by controlling the external electric field (E-field). The application of tensile biaxial strain results in more isotropic electrical conductance of B-As, and it can also effectively enhance the response toward SO2. For example, under a 1% equibiaxial tensile strain, a 132% response can be obtained along the zigzag direction. This work suggests the promising prospects of B-As-based gas sensors for detecting SO2 among SF6 decompositions.-
dc.languageeng-
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano-
dc.relation.ispartofNanotechnology-
dc.rightsNanotechnology. Copyright © Institute of Physics Publishing.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectblack arsenene-
dc.subjectelectric field-
dc.subjectgas sensor-
dc.subjectSF6decompositions-
dc.subjectSO2adsorption-
dc.titleStrain-engineered black arsenene as a promising gas sensor for detecting SO2 among SF6 decompositions-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6528/abc288-
dc.identifier.pmid33075753-
dc.identifier.scopuseid_2-s2.0-85097313840-
dc.identifier.hkuros322971-
dc.identifier.volume32-
dc.identifier.issue6-
dc.identifier.spagearticle no. 065501-
dc.identifier.epagearticle no. 065501-
dc.identifier.isiWOS:000590398900001-
dc.publisher.placeUnited Kingdom-

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