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Article: Intimately contacted Ni2P on CdS nanorods for highly efficient photocatalytic H2 evolution: New phosphidation route and the interfacial separation mechanism of charge carriers

TitleIntimately contacted Ni2P on CdS nanorods for highly efficient photocatalytic H2 evolution: New phosphidation route and the interfacial separation mechanism of charge carriers
Authors
KeywordsNi2PPhosphidation
CdS nanorods
Photocatalytic Hydrogen Production
Solvothermal
Issue Date2021
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apcatb
Citation
Applied Catalysis B: Environmental, 2021, v. 281, p. article no. 119443 How to Cite?
AbstractA new phosphidation route based on a solvothermal method is demonstrated for the deposition of Ni2P on CdS nanorods photocatalyst with NaBH4 as a crucial reactant and (H2PO2)- as dissolvable P precursor, which leads to a highly crystallized and well contacted Ni2P on CdS in an Ohmic-contact model. On the optimized sample (2%Ni2P/CdS), as high as 1.18 mmol·h-1 H2 evolution rate can be obtained over 50 mg sample, corresponding to an apparent quantum efficiency of 56% (under λ = 435 nm irradiation). The activity is significantly higher than the samples prepared by conventional phosphidation processes and the classical Pt (2%) modified CdS. The remarkable HER performance can be ascribed to the loading of intimately contacted Ni2P, which can promote the separation of photoinduced charge carriers and simultaneously decreases the overpotential for H2 evolution. Furthermore, a reservoir role for photoinduced e- was observed on the deposited Ni2P beyond as a cocatalyst.
Persistent Identifierhttp://hdl.handle.net/10722/300931
ISSN
2023 Impact Factor: 20.2
2023 SCImago Journal Rankings: 5.112
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Z-
dc.contributor.authorQi, Z-
dc.contributor.authorFan, X-
dc.contributor.authorLeung, DYC-
dc.contributor.authorLong, J-
dc.contributor.authorZhang, Z-
dc.contributor.authorMiao, T-
dc.contributor.authorMeng, S-
dc.contributor.authorChen, S-
dc.contributor.authorFu, X-
dc.date.accessioned2021-07-06T03:12:13Z-
dc.date.available2021-07-06T03:12:13Z-
dc.date.issued2021-
dc.identifier.citationApplied Catalysis B: Environmental, 2021, v. 281, p. article no. 119443-
dc.identifier.issn0926-3373-
dc.identifier.urihttp://hdl.handle.net/10722/300931-
dc.description.abstractA new phosphidation route based on a solvothermal method is demonstrated for the deposition of Ni2P on CdS nanorods photocatalyst with NaBH4 as a crucial reactant and (H2PO2)- as dissolvable P precursor, which leads to a highly crystallized and well contacted Ni2P on CdS in an Ohmic-contact model. On the optimized sample (2%Ni2P/CdS), as high as 1.18 mmol·h-1 H2 evolution rate can be obtained over 50 mg sample, corresponding to an apparent quantum efficiency of 56% (under λ = 435 nm irradiation). The activity is significantly higher than the samples prepared by conventional phosphidation processes and the classical Pt (2%) modified CdS. The remarkable HER performance can be ascribed to the loading of intimately contacted Ni2P, which can promote the separation of photoinduced charge carriers and simultaneously decreases the overpotential for H2 evolution. Furthermore, a reservoir role for photoinduced e- was observed on the deposited Ni2P beyond as a cocatalyst.-
dc.languageeng-
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apcatb-
dc.relation.ispartofApplied Catalysis B: Environmental-
dc.subjectNi2PPhosphidation-
dc.subjectCdS nanorods-
dc.subjectPhotocatalytic Hydrogen Production-
dc.subjectSolvothermal-
dc.titleIntimately contacted Ni2P on CdS nanorods for highly efficient photocatalytic H2 evolution: New phosphidation route and the interfacial separation mechanism of charge carriers-
dc.typeArticle-
dc.identifier.emailLeung, DYC: ycleung@hku.hk-
dc.identifier.authorityLeung, DYC=rp00149-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apcatb.2020.119443-
dc.identifier.scopuseid_2-s2.0-85089813848-
dc.identifier.hkuros323068-
dc.identifier.volume281-
dc.identifier.spagearticle no. 119443-
dc.identifier.epagearticle no. 119443-
dc.identifier.isiWOS:000591342900002-
dc.publisher.placeNetherlands-

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