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Article: Phase-field model for grain boundary grooving in multi-component thin films

TitlePhase-field model for grain boundary grooving in multi-component thin films
Authors
Issue Date2006
Citation
Modelling and Simulation in Materials Science and Engineering, 2006, v. 14, n. 3, p. 433-443 How to Cite?
AbstractPolycrystalline thin films can be unstable with respect to island formation (agglomeration) through grooving where grain boundaries intersect the free surface and/or thin film-substrate interface. We develop a phase-field model to study the evolution of the phases, composition, microstructure and morphology of such thin films. The phase-field model is quite general, describing compounds and solid solution alloys with sufficient freedom to choose solubilities, grain boundary and interface energies and heats of segregation to all interfaces. We present analytical results which describe the interface profiles, with and without segregation, and confirm them using in numerical simulations. We demonstrate that the present model accurately reproduces theoretical grain boundary groove angles both at and far from equilibrium. As an example, we apply the phase-field model to the special case of a Ni(Pt)Si (nickel/platinum silicide) thin film on an initially flat silicon substrate. © 2006 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/303275
ISSN
2023 Impact Factor: 1.9
2023 SCImago Journal Rankings: 0.501
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorBouville, Mathieu-
dc.contributor.authorHu, Shenyang-
dc.contributor.authorChen, Long Qing-
dc.contributor.authorChi, Dongzhi-
dc.contributor.authorSrolovitz, David J.-
dc.date.accessioned2021-09-15T08:24:59Z-
dc.date.available2021-09-15T08:24:59Z-
dc.date.issued2006-
dc.identifier.citationModelling and Simulation in Materials Science and Engineering, 2006, v. 14, n. 3, p. 433-443-
dc.identifier.issn0965-0393-
dc.identifier.urihttp://hdl.handle.net/10722/303275-
dc.description.abstractPolycrystalline thin films can be unstable with respect to island formation (agglomeration) through grooving where grain boundaries intersect the free surface and/or thin film-substrate interface. We develop a phase-field model to study the evolution of the phases, composition, microstructure and morphology of such thin films. The phase-field model is quite general, describing compounds and solid solution alloys with sufficient freedom to choose solubilities, grain boundary and interface energies and heats of segregation to all interfaces. We present analytical results which describe the interface profiles, with and without segregation, and confirm them using in numerical simulations. We demonstrate that the present model accurately reproduces theoretical grain boundary groove angles both at and far from equilibrium. As an example, we apply the phase-field model to the special case of a Ni(Pt)Si (nickel/platinum silicide) thin film on an initially flat silicon substrate. © 2006 IOP Publishing Ltd.-
dc.languageeng-
dc.relation.ispartofModelling and Simulation in Materials Science and Engineering-
dc.titlePhase-field model for grain boundary grooving in multi-component thin films-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0965-0393/14/3/007-
dc.identifier.scopuseid_2-s2.0-33645744496-
dc.identifier.volume14-
dc.identifier.issue3-
dc.identifier.spage433-
dc.identifier.epage443-
dc.identifier.eissn1361-651X-
dc.identifier.isiWOS:000237813100007-

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