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- Publisher Website: 10.1016/j.actamat.2006.01.017
- Scopus: eid_2-s2.0-33748088194
- WOS: WOS:000237673700009
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Article: Level set simulation of dislocation dynamics in thin films
Title | Level set simulation of dislocation dynamics in thin films |
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Authors | |
Keywords | Dislocation dynamics Simulation Thin films |
Issue Date | 2006 |
Citation | Acta Materialia, 2006, v. 54, n. 9, p. 2371-2381 How to Cite? |
Abstract | We develop a level set method-based, three-dimensional dislocation dynamics simulation method to describe the motion of dislocations in a heteroepitaxial thin film. The simulations accurately describe the elastic interactions of the dislocations, stress fields throughout the film and substrate, dislocation annihilation, and dislocation reactions. As an example application, we consider the expansion of dislocation half-loops in a Si1-ηGeη thin film on a Si substrate. The expansion of the loop(s) creates interfacial misfit dislocations connected to propagating threading segments. The simulations show cross-slip of screw segments from one (1 1 1) glide plane to another, topological changes, and thermodynamically favorable dislocation reactions. © 2006 Acta Materialia Inc. |
Persistent Identifier | http://hdl.handle.net/10722/303281 |
ISSN | 2023 Impact Factor: 8.3 2023 SCImago Journal Rankings: 2.916 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Quek, S. S. | - |
dc.contributor.author | Xiang, Y. | - |
dc.contributor.author | Zhang, Y. W. | - |
dc.contributor.author | Srolovitz, D. J. | - |
dc.contributor.author | Lu, C. | - |
dc.date.accessioned | 2021-09-15T08:24:59Z | - |
dc.date.available | 2021-09-15T08:24:59Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Acta Materialia, 2006, v. 54, n. 9, p. 2371-2381 | - |
dc.identifier.issn | 1359-6454 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303281 | - |
dc.description.abstract | We develop a level set method-based, three-dimensional dislocation dynamics simulation method to describe the motion of dislocations in a heteroepitaxial thin film. The simulations accurately describe the elastic interactions of the dislocations, stress fields throughout the film and substrate, dislocation annihilation, and dislocation reactions. As an example application, we consider the expansion of dislocation half-loops in a Si1-ηGeη thin film on a Si substrate. The expansion of the loop(s) creates interfacial misfit dislocations connected to propagating threading segments. The simulations show cross-slip of screw segments from one (1 1 1) glide plane to another, topological changes, and thermodynamically favorable dislocation reactions. © 2006 Acta Materialia Inc. | - |
dc.language | eng | - |
dc.relation.ispartof | Acta Materialia | - |
dc.subject | Dislocation dynamics | - |
dc.subject | Simulation | - |
dc.subject | Thin films | - |
dc.title | Level set simulation of dislocation dynamics in thin films | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.actamat.2006.01.017 | - |
dc.identifier.scopus | eid_2-s2.0-33748088194 | - |
dc.identifier.volume | 54 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 2371 | - |
dc.identifier.epage | 2381 | - |
dc.identifier.isi | WOS:000237673700009 | - |