File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Crystal morphology evolution in film growth: A general approach

TitleCrystal morphology evolution in film growth: A general approach
Authors
KeywordsA1. Interfaces
A1. Diffusion
A1. Crystal morphology
A3. Metalorganic chemical vapor deposition
A1. Growth models
Issue Date2006
Citation
Journal of Crystal Growth, 2006, v. 296, n. 1, p. 86-96 How to Cite?
AbstractMost crystal growth processes involve many competing mechanisms, all of which can affect the observed morphology evolution. This paper provides a framework for understanding growth competition and determining which mechanisms dominate the morphology under different conditions. The approach is based upon the development of a generalized growth law combined with asymptotic analysis. Next, we show how this model unifies many of the physical processes that are known to be of importance in film growth. Next, we provide a graph theoretic method for analyzing growth competition and identifying the morphology-determining processes and parameters. As an example, we apply the present approach to the case of metalorganic chemical vapor deposition of GaN. Finally, we examine how the mechanisms that control morphology evolution change as the crystal grows larger. © 2006 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/303286
ISSN
2023 Impact Factor: 1.7
2023 SCImago Journal Rankings: 0.379
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorDu, Danxu-
dc.contributor.authorSrolovitz, David J.-
dc.date.accessioned2021-09-15T08:25:00Z-
dc.date.available2021-09-15T08:25:00Z-
dc.date.issued2006-
dc.identifier.citationJournal of Crystal Growth, 2006, v. 296, n. 1, p. 86-96-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/10722/303286-
dc.description.abstractMost crystal growth processes involve many competing mechanisms, all of which can affect the observed morphology evolution. This paper provides a framework for understanding growth competition and determining which mechanisms dominate the morphology under different conditions. The approach is based upon the development of a generalized growth law combined with asymptotic analysis. Next, we show how this model unifies many of the physical processes that are known to be of importance in film growth. Next, we provide a graph theoretic method for analyzing growth competition and identifying the morphology-determining processes and parameters. As an example, we apply the present approach to the case of metalorganic chemical vapor deposition of GaN. Finally, we examine how the mechanisms that control morphology evolution change as the crystal grows larger. © 2006 Elsevier B.V. All rights reserved.-
dc.languageeng-
dc.relation.ispartofJournal of Crystal Growth-
dc.subjectA1. Interfaces-
dc.subjectA1. Diffusion-
dc.subjectA1. Crystal morphology-
dc.subjectA3. Metalorganic chemical vapor deposition-
dc.subjectA1. Growth models-
dc.titleCrystal morphology evolution in film growth: A general approach-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jcrysgro.2006.08.024-
dc.identifier.scopuseid_2-s2.0-33749574810-
dc.identifier.volume296-
dc.identifier.issue1-
dc.identifier.spage86-
dc.identifier.epage96-
dc.identifier.isiWOS:000241884200013-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats