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- Publisher Website: 10.1103/PhysRevB.75.125319
- Scopus: eid_2-s2.0-33947523079
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Article: Mechanisms of silicon diffusion in erbium silicide
Title | Mechanisms of silicon diffusion in erbium silicide |
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Authors | |
Issue Date | 2007 |
Citation | Physical Review B - Condensed Matter and Materials Physics, 2007, v. 75, n. 12, article no. 125319 How to Cite? |
Abstract | First-principles methods are employed to determine how Si diffuses in the layered metal silicide Er Si2-x. Si diffusion is found to be extraordinarily anisotropic, with the migration barrier associated with Si diffusing across Er planes nearly four times larger than within the Si planes. The activation energy for in-plane diffusion of Si decreases by 20% when Er Si2-x is grown heteroepitaxially on Si(001), as a result of the epitaxial strain. This effect is associated with how strain modifies the formation energy of the diffusing defect and changes the energy landscape of diffusion. These results are consistent with experimental observations of defect formation in heteroepitaxial Er Si2-x films on Si(001). © 2007 The American Physical Society. |
Persistent Identifier | http://hdl.handle.net/10722/303298 |
ISSN | 2014 Impact Factor: 3.736 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Peng, G. W. | - |
dc.contributor.author | Feng, Y. P. | - |
dc.contributor.author | Huan, A. C.H. | - |
dc.contributor.author | Bouville, M. | - |
dc.contributor.author | Chi, D. Z. | - |
dc.contributor.author | Srolovitz, D. J. | - |
dc.date.accessioned | 2021-09-15T08:25:01Z | - |
dc.date.available | 2021-09-15T08:25:01Z | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | Physical Review B - Condensed Matter and Materials Physics, 2007, v. 75, n. 12, article no. 125319 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303298 | - |
dc.description.abstract | First-principles methods are employed to determine how Si diffuses in the layered metal silicide Er Si2-x. Si diffusion is found to be extraordinarily anisotropic, with the migration barrier associated with Si diffusing across Er planes nearly four times larger than within the Si planes. The activation energy for in-plane diffusion of Si decreases by 20% when Er Si2-x is grown heteroepitaxially on Si(001), as a result of the epitaxial strain. This effect is associated with how strain modifies the formation energy of the diffusing defect and changes the energy landscape of diffusion. These results are consistent with experimental observations of defect formation in heteroepitaxial Er Si2-x films on Si(001). © 2007 The American Physical Society. | - |
dc.language | eng | - |
dc.relation.ispartof | Physical Review B - Condensed Matter and Materials Physics | - |
dc.title | Mechanisms of silicon diffusion in erbium silicide | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1103/PhysRevB.75.125319 | - |
dc.identifier.scopus | eid_2-s2.0-33947523079 | - |
dc.identifier.volume | 75 | - |
dc.identifier.issue | 12 | - |
dc.identifier.spage | article no. 125319 | - |
dc.identifier.epage | article no. 125319 | - |
dc.identifier.eissn | 1550-235X | - |
dc.identifier.isi | WOS:000245330200068 | - |