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- Publisher Website: 10.1063/1.344968
- Scopus: eid_2-s2.0-0343128459
- WOS: WOS:A1990DD73700026
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Article: Crosshatched surface morphology in strained III-V semiconductor films
Title | Crosshatched surface morphology in strained III-V semiconductor films |
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Authors | |
Issue Date | 1990 |
Citation | Journal of Applied Physics, 1990, v. 67, n. 9, p. 4093-4098 How to Cite? |
Abstract | The correlation between the surface crosshatched morphology and the interfacial misfit dislocations in strained III-V semiconductor heteroepitaxy has been studied. The surface pattern is clearly seen on samples grown at high temperature (520°C) and those with small lattice-mismatched (f<2%) systems. A poorly defined crosshatched morphology was found on layers grown at relatively low temperature (400°C). As the lattice mismatch of the strained layer becomes larger than 2%, a roughly textured surface morphology is commonly observed in place of actual cross-hatching. Few threading dislocations are observed in the strained layer when the crosshatched pattern develops. It is also noted that the surface crosshatched pattern develops after the majority of the interfacial misfit dislocations are generated. The result suggests that the surface crosshatch pattern is directly related to the generation of interfacial misfit dislocations through glide processes. |
Persistent Identifier | http://hdl.handle.net/10722/303745 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chang, Kevin H. | - |
dc.contributor.author | Gilbala, Ronald | - |
dc.contributor.author | Srolovitz, David J. | - |
dc.contributor.author | Bhattacharya, Pallab K. | - |
dc.contributor.author | Mansfield, John F. | - |
dc.date.accessioned | 2021-09-15T08:25:56Z | - |
dc.date.available | 2021-09-15T08:25:56Z | - |
dc.date.issued | 1990 | - |
dc.identifier.citation | Journal of Applied Physics, 1990, v. 67, n. 9, p. 4093-4098 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303745 | - |
dc.description.abstract | The correlation between the surface crosshatched morphology and the interfacial misfit dislocations in strained III-V semiconductor heteroepitaxy has been studied. The surface pattern is clearly seen on samples grown at high temperature (520°C) and those with small lattice-mismatched (f<2%) systems. A poorly defined crosshatched morphology was found on layers grown at relatively low temperature (400°C). As the lattice mismatch of the strained layer becomes larger than 2%, a roughly textured surface morphology is commonly observed in place of actual cross-hatching. Few threading dislocations are observed in the strained layer when the crosshatched pattern develops. It is also noted that the surface crosshatched pattern develops after the majority of the interfacial misfit dislocations are generated. The result suggests that the surface crosshatch pattern is directly related to the generation of interfacial misfit dislocations through glide processes. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.title | Crosshatched surface morphology in strained III-V semiconductor films | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.344968 | - |
dc.identifier.scopus | eid_2-s2.0-0343128459 | - |
dc.identifier.volume | 67 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 4093 | - |
dc.identifier.epage | 4098 | - |
dc.identifier.isi | WOS:A1990DD73700026 | - |