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- Publisher Website: 10.1126/science.abb5144
- Scopus: eid_2-s2.0-85105126017
- PMID: 33926952
- WOS: WOS:000645554100044
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Article: Atomic-scale ion transistor with ultrahigh diffusivity
Title | Atomic-scale ion transistor with ultrahigh diffusivity |
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Authors | |
Issue Date | 2021 |
Publisher | American Association for the Advancement of Science. The Journal's web site is located at http://sciencemag.org |
Citation | Science, 2021, v. 372 n. 6541, p. 501-503 How to Cite? |
Abstract | Biological ion channels rapidly and selectively gate ion transport through atomic-scale filters to maintain vital life functions. We report an atomic-scale ion transistor exhibiting ultrafast and highly selective ion transport controlled by electrical gating in graphene channels around 3 angstroms in height, made from a single flake of reduced graphene oxide. The ion diffusion coefficient reaches two orders of magnitude higher than the coefficient in bulk water. Atomic-scale ion transport shows a threshold behavior due to the critical energy barrier for hydrated ion insertion. Our in situ optical measurements suggest that ultrafast ion transport likely originates from highly dense packing of ions and their concerted movement inside the graphene channels. |
Persistent Identifier | http://hdl.handle.net/10722/308099 |
ISSN | 2023 Impact Factor: 44.7 2023 SCImago Journal Rankings: 11.902 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Xue, Y | - |
dc.contributor.author | Xia, Y | - |
dc.contributor.author | Yang, S | - |
dc.contributor.author | Alsaid, Y | - |
dc.contributor.author | Fong, KY | - |
dc.contributor.author | Wang, Y | - |
dc.contributor.author | Zhang, X | - |
dc.date.accessioned | 2021-11-12T13:42:30Z | - |
dc.date.available | 2021-11-12T13:42:30Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Science, 2021, v. 372 n. 6541, p. 501-503 | - |
dc.identifier.issn | 0036-8075 | - |
dc.identifier.uri | http://hdl.handle.net/10722/308099 | - |
dc.description.abstract | Biological ion channels rapidly and selectively gate ion transport through atomic-scale filters to maintain vital life functions. We report an atomic-scale ion transistor exhibiting ultrafast and highly selective ion transport controlled by electrical gating in graphene channels around 3 angstroms in height, made from a single flake of reduced graphene oxide. The ion diffusion coefficient reaches two orders of magnitude higher than the coefficient in bulk water. Atomic-scale ion transport shows a threshold behavior due to the critical energy barrier for hydrated ion insertion. Our in situ optical measurements suggest that ultrafast ion transport likely originates from highly dense packing of ions and their concerted movement inside the graphene channels. | - |
dc.language | eng | - |
dc.publisher | American Association for the Advancement of Science. The Journal's web site is located at http://sciencemag.org | - |
dc.relation.ispartof | Science | - |
dc.rights | Science. Copyright © American Association for the Advancement of Science. | - |
dc.rights | This is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in [Science Journal Title] on [Volume number and date], DOI: [insert DOI number]. | - |
dc.title | Atomic-scale ion transistor with ultrahigh diffusivity | - |
dc.type | Article | - |
dc.identifier.email | Zhang, X: president@hku.hk | - |
dc.identifier.authority | Zhang, X=rp02411 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1126/science.abb5144 | - |
dc.identifier.pmid | 33926952 | - |
dc.identifier.scopus | eid_2-s2.0-85105126017 | - |
dc.identifier.hkuros | 329930 | - |
dc.identifier.volume | 372 | - |
dc.identifier.issue | 6541 | - |
dc.identifier.spage | 501 | - |
dc.identifier.epage | 503 | - |
dc.identifier.isi | WOS:000645554100044 | - |
dc.publisher.place | United States | - |