File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Investigation of the structural and electrical properties of Sr1-xBi2.2Ta2O9 thin films with deficient Sr contents

TitleInvestigation of the structural and electrical properties of Sr<inf>1-x</inf>Bi<inf>2.2</inf>Ta<inf>2</inf>O<inf>9</inf> thin films with deficient Sr contents
Authors
Issue Date2001
Citation
Applied Surface Science, 2001, v. 173, n. 3-4, p. 307-312 How to Cite?
AbstractStrontium bismuth tantalate Sr1-xBi2.2Ta2O9 (SBT, x = 0, 0.1, 0.2, 0.3, 0.4, 0.6) thin films with deficient Sr contents were prepared at 750 °C on Pt/TiO2/SiO2/Si substrates using metalorganic decomposition (MOD) spin-on technique. Effect of Sr deficiency compositions on the structural and electrical properties were investigated by means of X-ray diffraction (XRD), inductively coupled plasma (ICP) analyses, electronic probe microanalyses (EPMA), atomic force microscope (AFM), scanning electron microscope (SEM) and electrical measurements. The XRD results indicate the films with Sr deficiency content at 40% and below have layered perovskite structure with the distorted lattice. For films with 60% deficient Sr, the layered structure cannot be formed. SEM and AFM micrograph shows the surface morphology is very sensitive to the Sr deficiency. With increasing the Sr deficiency to 40% and above, the films exhibit the extremely inhomogeneity and poor crystallinity. The remnant polarization (Pr) gradually reduces with Sr deficiency. This is attributed to the distorted layered structure and the formation of amorphous phase. In summary, SrBi2.2Ta2O9 is found to be the optimum composition with respect to grain size, morphology, and electrical properties.
Persistent Identifierhttp://hdl.handle.net/10722/310349
ISSN
2023 Impact Factor: 6.3
2023 SCImago Journal Rankings: 1.210
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, Aidong-
dc.contributor.authorLing, Huiqin-
dc.contributor.authorWu, Di-
dc.contributor.authorYu, Tao-
dc.contributor.authorWang, Mu-
dc.contributor.authorYin, Xiaobo-
dc.contributor.authorLiu, Zhiguo-
dc.contributor.authorMing, Naiben-
dc.date.accessioned2022-01-31T06:04:40Z-
dc.date.available2022-01-31T06:04:40Z-
dc.date.issued2001-
dc.identifier.citationApplied Surface Science, 2001, v. 173, n. 3-4, p. 307-312-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10722/310349-
dc.description.abstractStrontium bismuth tantalate Sr1-xBi2.2Ta2O9 (SBT, x = 0, 0.1, 0.2, 0.3, 0.4, 0.6) thin films with deficient Sr contents were prepared at 750 °C on Pt/TiO2/SiO2/Si substrates using metalorganic decomposition (MOD) spin-on technique. Effect of Sr deficiency compositions on the structural and electrical properties were investigated by means of X-ray diffraction (XRD), inductively coupled plasma (ICP) analyses, electronic probe microanalyses (EPMA), atomic force microscope (AFM), scanning electron microscope (SEM) and electrical measurements. The XRD results indicate the films with Sr deficiency content at 40% and below have layered perovskite structure with the distorted lattice. For films with 60% deficient Sr, the layered structure cannot be formed. SEM and AFM micrograph shows the surface morphology is very sensitive to the Sr deficiency. With increasing the Sr deficiency to 40% and above, the films exhibit the extremely inhomogeneity and poor crystallinity. The remnant polarization (Pr) gradually reduces with Sr deficiency. This is attributed to the distorted layered structure and the formation of amorphous phase. In summary, SrBi2.2Ta2O9 is found to be the optimum composition with respect to grain size, morphology, and electrical properties.-
dc.languageeng-
dc.relation.ispartofApplied Surface Science-
dc.titleInvestigation of the structural and electrical properties of Sr<inf>1-x</inf>Bi<inf>2.2</inf>Ta<inf>2</inf>O<inf>9</inf> thin films with deficient Sr contents-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0169-4332(01)00008-3-
dc.identifier.scopuseid_2-s2.0-0034836161-
dc.identifier.volume173-
dc.identifier.issue3-4-
dc.identifier.spage307-
dc.identifier.epage312-
dc.identifier.isiWOS:000167479800016-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats