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Conference Paper: Properties of PbZrxTi1-xO3/CeO2/SiO2/Si structure

TitleProperties of PbZr<inf>x</inf>Ti<inf>1-x</inf>O<inf>3</inf>/CeO<inf>2</inf>/SiO<inf>2</inf>/Si structure
Authors
KeywordsFerroelectric FET
Ferroelectric thin film
PbZrxTi1−xO3 (PZT)
Pulsed laser deposition (PLD)
Issue Date2001
Citation
Integrated Ferroelectrics, 2001, v. 34, n. 1-4, p. 131-137 How to Cite?
AbstractWe report the crystalline quality and electrical properties of PbZrxTi1-xO3 (PZT) films on n-type Si(100) substrates with CeO2/SiO2 dual buffer layers. PZT films and CeO2 buffer layers were prepared by pulsed laser deposition technique, and SiO2 buffer layers were formed by thermal dry oxidation. It was found that CeO2/SiO2 dual buffer layers effectively prevented Si and Pb interdiffusion between PZT and Si substrates. Furthermore, the capacitance-voltage (C-V) characteristics of the PZT/CeO2/SiO2/Si heterostructures demonstrated ferroelectric switching properties, showing a memory window as large as 2.7 V at 1 MHz.
Persistent Identifierhttp://hdl.handle.net/10722/310350
ISSN
2023 Impact Factor: 0.7
2023 SCImago Journal Rankings: 0.205
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, X.-
dc.contributor.authorYin, X. J.-
dc.contributor.authorLiu, Z. G.-
dc.contributor.authorWang, L.-
dc.contributor.authorLi, J.-
dc.contributor.authorZhu, X. H.-
dc.contributor.authorChen, K. J.-
dc.date.accessioned2022-01-31T06:04:40Z-
dc.date.available2022-01-31T06:04:40Z-
dc.date.issued2001-
dc.identifier.citationIntegrated Ferroelectrics, 2001, v. 34, n. 1-4, p. 131-137-
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/10722/310350-
dc.description.abstractWe report the crystalline quality and electrical properties of PbZrxTi1-xO3 (PZT) films on n-type Si(100) substrates with CeO2/SiO2 dual buffer layers. PZT films and CeO2 buffer layers were prepared by pulsed laser deposition technique, and SiO2 buffer layers were formed by thermal dry oxidation. It was found that CeO2/SiO2 dual buffer layers effectively prevented Si and Pb interdiffusion between PZT and Si substrates. Furthermore, the capacitance-voltage (C-V) characteristics of the PZT/CeO2/SiO2/Si heterostructures demonstrated ferroelectric switching properties, showing a memory window as large as 2.7 V at 1 MHz.-
dc.languageeng-
dc.relation.ispartofIntegrated Ferroelectrics-
dc.subjectFerroelectric FET-
dc.subjectFerroelectric thin film-
dc.subjectPbZrxTi1−xO3 (PZT)-
dc.subjectPulsed laser deposition (PLD)-
dc.titleProperties of PbZr<inf>x</inf>Ti<inf>1-x</inf>O<inf>3</inf>/CeO<inf>2</inf>/SiO<inf>2</inf>/Si structure-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1080/10584580108012882-
dc.identifier.scopuseid_2-s2.0-0035027512-
dc.identifier.volume34-
dc.identifier.issue1-4-
dc.identifier.spage131-
dc.identifier.epage137-
dc.identifier.isiWOS:000167524600016-

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