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- Publisher Website: 10.1007/s003390101048
- Scopus: eid_2-s2.0-0036778673
- WOS: WOS:000176768300015
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Article: The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer
Title | The orientation-selective growth of LaNiO<inf>3</inf> films on Si(100) by pulsed laser deposition using a MgO buffer |
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Authors | |
Issue Date | 2002 |
Citation | Applied Physics A: Materials Science and Processing, 2002, v. 75, n. 4, p. 545-549 How to Cite? |
Abstract | Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. |
Persistent Identifier | http://hdl.handle.net/10722/310374 |
ISSN | 2023 Impact Factor: 2.5 2023 SCImago Journal Rankings: 0.446 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, X. Y. | - |
dc.contributor.author | Wong, K. H. | - |
dc.contributor.author | Mak, C. L. | - |
dc.contributor.author | Liu, J. M. | - |
dc.contributor.author | Yin, X. B. | - |
dc.contributor.author | Wang, M. | - |
dc.contributor.author | Liu, Z. G. | - |
dc.date.accessioned | 2022-01-31T06:04:43Z | - |
dc.date.available | 2022-01-31T06:04:43Z | - |
dc.date.issued | 2002 | - |
dc.identifier.citation | Applied Physics A: Materials Science and Processing, 2002, v. 75, n. 4, p. 545-549 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | http://hdl.handle.net/10722/310374 | - |
dc.description.abstract | Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics A: Materials Science and Processing | - |
dc.title | The orientation-selective growth of LaNiO<inf>3</inf> films on Si(100) by pulsed laser deposition using a MgO buffer | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1007/s003390101048 | - |
dc.identifier.scopus | eid_2-s2.0-0036778673 | - |
dc.identifier.volume | 75 | - |
dc.identifier.issue | 4 | - |
dc.identifier.spage | 545 | - |
dc.identifier.epage | 549 | - |
dc.identifier.isi | WOS:000176768300015 | - |