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Article: Nitrogen-defect induced trap states steering electron-hole migration in graphite carbon nitride

TitleNitrogen-defect induced trap states steering electron-hole migration in graphite carbon nitride
Authors
KeywordsGraphite carbon nitride
Nitrogen defects
Photocatalysis
Trap states
Femtosecond transient absorption spectroscopy
Issue Date2022
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apcatb
Citation
Applied Catalysis B: Environmental, 2022, v. 306, p. article no. 121142 How to Cite?
AbstractDefect structures of semiconductors intrinsically regulate the trap states, excitons and active charge carriers for artificial photosynthesis systems. A g-C3N4 system with abundant nitrogen defects was prepared through a thermal polycondensation strategy to reveal the role of trap states and exhibited a 20-fold enhanced H2 evolution efficiency relative to bulk g-C3N4 under visible light irradiation. Subsequent femtosecond transient absorption spectroscopy study found that the N-defect induced shallow trap states can capture photogenerated electrons to inhibit deep trapping and direct recombination of photogenerated charges. The active electrons in shallow trap states can enhance the photocatalytic H2 evolution when compared with the inactive electrons in deep trap states. Mid-infrared transient absorption spectroscopy also confirmed the increased quantity of shallow-trapped electrons without interference of other signals. This work provides new insights for steering depth of trap states and photocatalytic processes through N defects to achieve high photocatalytic performance using femtosecond transient absorption spectroscopy.
Persistent Identifierhttp://hdl.handle.net/10722/310515
ISSN
2023 Impact Factor: 20.2
2023 SCImago Journal Rankings: 5.112
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, W-
dc.contributor.authorWei, Z-
dc.contributor.authorZhu, K-
dc.contributor.authorWei, W-
dc.contributor.authorYang, J-
dc.contributor.authorJing, J-
dc.contributor.authorPhillips, DL-
dc.contributor.authorZhu, Y-
dc.date.accessioned2022-02-07T07:57:47Z-
dc.date.available2022-02-07T07:57:47Z-
dc.date.issued2022-
dc.identifier.citationApplied Catalysis B: Environmental, 2022, v. 306, p. article no. 121142-
dc.identifier.issn0926-3373-
dc.identifier.urihttp://hdl.handle.net/10722/310515-
dc.description.abstractDefect structures of semiconductors intrinsically regulate the trap states, excitons and active charge carriers for artificial photosynthesis systems. A g-C3N4 system with abundant nitrogen defects was prepared through a thermal polycondensation strategy to reveal the role of trap states and exhibited a 20-fold enhanced H2 evolution efficiency relative to bulk g-C3N4 under visible light irradiation. Subsequent femtosecond transient absorption spectroscopy study found that the N-defect induced shallow trap states can capture photogenerated electrons to inhibit deep trapping and direct recombination of photogenerated charges. The active electrons in shallow trap states can enhance the photocatalytic H2 evolution when compared with the inactive electrons in deep trap states. Mid-infrared transient absorption spectroscopy also confirmed the increased quantity of shallow-trapped electrons without interference of other signals. This work provides new insights for steering depth of trap states and photocatalytic processes through N defects to achieve high photocatalytic performance using femtosecond transient absorption spectroscopy.-
dc.languageeng-
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apcatb-
dc.relation.ispartofApplied Catalysis B: Environmental-
dc.subjectGraphite carbon nitride-
dc.subjectNitrogen defects-
dc.subjectPhotocatalysis-
dc.subjectTrap states-
dc.subjectFemtosecond transient absorption spectroscopy-
dc.titleNitrogen-defect induced trap states steering electron-hole migration in graphite carbon nitride-
dc.typeArticle-
dc.identifier.emailWei, Z: weiz19@hku.hk-
dc.identifier.emailPhillips, DL: phillips@hku.hk-
dc.identifier.authorityPhillips, DL=rp00770-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apcatb.2022.121142-
dc.identifier.scopuseid_2-s2.0-85123617084-
dc.identifier.hkuros331854-
dc.identifier.volume306-
dc.identifier.spagearticle no. 121142-
dc.identifier.epagearticle no. 121142-
dc.identifier.isiWOS:000783882000001-
dc.publisher.placeNetherlands-

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