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Article: Thermoelectric generation of orbital magnetization in metals

TitleThermoelectric generation of orbital magnetization in metals
Authors
Issue Date2021
Citation
Physical Review B, 2021, v. 103, n. 4, article no. 045401 How to Cite?
AbstractWe propose an orbital magnetothermal effect wherein a temperature gradient generates an orbital magnetization (OM) for Bloch electrons, and we present a unified theory for electrically and thermally induced OM, valid for both metals and insulators. We reveal that there exists an intrinsic response of OM, for which the susceptibilities are completely determined by the band geometric quantities such as interband Berry connections, interband orbital moments, and the quantum metric. The theory can be readily combined with first-principles calculations to study real materials. As an example, we calculate the OM response in CrI3 bilayers, where the intrinsic contribution dominates. The temperature scaling of intrinsic and extrinsic responses, the effect of phonon drag, and the phonon angular momentum contribution to OM are discussed.
DescriptionAccepted manuscript is available on the publisher website.
Persistent Identifierhttp://hdl.handle.net/10722/311502
ISSN
2021 Impact Factor: 3.908
2020 SCImago Journal Rankings: 1.780
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXiao, Cong-
dc.contributor.authorLiu, Huiying-
dc.contributor.authorZhao, Jianzhou-
dc.contributor.authorYang, Shengyuan A.-
dc.contributor.authorNiu, Qian-
dc.date.accessioned2022-03-22T11:54:05Z-
dc.date.available2022-03-22T11:54:05Z-
dc.date.issued2021-
dc.identifier.citationPhysical Review B, 2021, v. 103, n. 4, article no. 045401-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10722/311502-
dc.descriptionAccepted manuscript is available on the publisher website.-
dc.description.abstractWe propose an orbital magnetothermal effect wherein a temperature gradient generates an orbital magnetization (OM) for Bloch electrons, and we present a unified theory for electrically and thermally induced OM, valid for both metals and insulators. We reveal that there exists an intrinsic response of OM, for which the susceptibilities are completely determined by the band geometric quantities such as interband Berry connections, interband orbital moments, and the quantum metric. The theory can be readily combined with first-principles calculations to study real materials. As an example, we calculate the OM response in CrI3 bilayers, where the intrinsic contribution dominates. The temperature scaling of intrinsic and extrinsic responses, the effect of phonon drag, and the phonon angular momentum contribution to OM are discussed.-
dc.languageeng-
dc.relation.ispartofPhysical Review B-
dc.titleThermoelectric generation of orbital magnetization in metals-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1103/PhysRevB.103.045401-
dc.identifier.scopuseid_2-s2.0-85099286133-
dc.identifier.volume103-
dc.identifier.issue4-
dc.identifier.spagearticle no. 045401-
dc.identifier.epagearticle no. 045401-
dc.identifier.eissn2469-9969-
dc.identifier.isiWOS:000604827000003-

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