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Article: Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

TitleGrowth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility
Authors
Yang, PZha, JGao, GZheng, LHuang, HXia, YXu, SXiong, TZhang, ZYang, ZChen, YKi, DLiou, JLiao, WTan, C
Issue Date2022
Citation
Nano-Micro Letters, 2022, v. 14, p. 109 How to Cite?
DOI: http://dx.doi.org/10.1007/s40820-022-00852-2
Persistent Identifierhttp://hdl.handle.net/10722/312225
ISI Accession Number ID
WOS:000784977100002

 

DC FieldValueLanguage
dc.contributor.authorYang, P-
dc.contributor.authorZha, J-
dc.contributor.authorGao, G-
dc.contributor.authorZheng, L-
dc.contributor.authorHuang, H-
dc.contributor.authorXia, Y-
dc.contributor.authorXu, S-
dc.contributor.authorXiong, T-
dc.contributor.authorZhang, Z-
dc.contributor.authorYang, Z-
dc.contributor.authorChen, Y-
dc.contributor.authorKi, D-
dc.contributor.authorLiou, J-
dc.contributor.authorLiao, W-
dc.contributor.authorTan, C-
dc.date.accessioned2022-04-25T01:36:52Z-
dc.date.available2022-04-25T01:36:52Z-
dc.date.issued2022-
dc.identifier.citationNano-Micro Letters, 2022, v. 14, p. 109-
dc.identifier.urihttp://hdl.handle.net/10722/312225-
dc.languageeng-
dc.relation.ispartofNano-Micro Letters-
dc.titleGrowth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility-
dc.typeArticle-
dc.identifier.emailGao, G: guoyun@hku.hk-
dc.identifier.emailKi, D: dkki@hku.hk-
dc.identifier.authorityKi, D=rp02444-
dc.identifier.doi10.1007/s40820-022-00852-2-
dc.identifier.hkuros332878-
dc.identifier.volume14-
dc.identifier.spage109-
dc.identifier.epage109-
dc.identifier.isiWOS:000784977100002-

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