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- Publisher Website: 10.1109/LED.2019.2909282
- WOS: WOS:000469848300014
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Article: Thin-Film Transistors With the Fringe Effect and the Correction Factor for Mobility Extraction
Title | Thin-Film Transistors With the Fringe Effect and the Correction Factor for Mobility Extraction |
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Authors | |
Issue Date | 2019 |
Publisher | IEEE-Inst Electrical Electronics Engineers INC. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | IEEE Electron Device Letters, 2019, v. 40 n. 6, p. 897-900 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/312672 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, CD | - |
dc.contributor.author | Chen, ZH | - |
dc.contributor.author | Xu, KJ | - |
dc.contributor.author | Zheng, JW | - |
dc.contributor.author | Ou, H | - |
dc.contributor.author | Wang, ZG | - |
dc.contributor.author | Chen, HJ | - |
dc.contributor.author | Liu, XY | - |
dc.contributor.author | Wu, Q | - |
dc.contributor.author | Chan, KL | - |
dc.contributor.author | Liu, C | - |
dc.date.accessioned | 2022-05-12T10:54:00Z | - |
dc.date.available | 2022-05-12T10:54:00Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2019, v. 40 n. 6, p. 897-900 | - |
dc.identifier.uri | http://hdl.handle.net/10722/312672 | - |
dc.language | eng | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers INC. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.title | Thin-Film Transistors With the Fringe Effect and the Correction Factor for Mobility Extraction | - |
dc.type | Article | - |
dc.identifier.email | Chan, KL: pklc@hku.hk | - |
dc.identifier.authority | Chan, KL=rp01532 | - |
dc.identifier.doi | 10.1109/LED.2019.2909282 | - |
dc.identifier.hkuros | 332952 | - |
dc.identifier.volume | 40 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 897 | - |
dc.identifier.epage | 900 | - |
dc.identifier.isi | WOS:000469848300014 | - |
dc.publisher.place | USA | - |