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Article: Organic Field‐Effect Transistor Fabricated on Internal Shrinking Substrate

TitleOrganic Field‐Effect Transistor Fabricated on Internal Shrinking Substrate
Authors
Issue Date2022
PublisherWiley-V C H Verlag GMBH. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1613-6829
Citation
Small, 2022, v. 18 n. 8, p. 2106066 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/312731
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorDAI, SHS-
dc.contributor.authorPeng, B-
dc.contributor.authorCHEN, M-
dc.contributor.authorHE, Z-
dc.contributor.authorLEUNG, KWG-
dc.contributor.authorCHIK, KK-
dc.contributor.authorFan, SF-
dc.contributor.authorLu, Y-
dc.contributor.authorChan, KL-
dc.date.accessioned2022-05-12T10:54:48Z-
dc.date.available2022-05-12T10:54:48Z-
dc.date.issued2022-
dc.identifier.citationSmall, 2022, v. 18 n. 8, p. 2106066-
dc.identifier.urihttp://hdl.handle.net/10722/312731-
dc.languageeng-
dc.publisherWiley-V C H Verlag GMBH. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1613-6829-
dc.relation.ispartofSmall-
dc.titleOrganic Field‐Effect Transistor Fabricated on Internal Shrinking Substrate-
dc.typeArticle-
dc.identifier.emailChan, KL: pklc@hku.hk-
dc.identifier.authorityChan, KL=rp01532-
dc.identifier.doi10.1002/smll.202106066-
dc.identifier.hkuros332940-
dc.identifier.volume18-
dc.identifier.issue8-
dc.identifier.spage2106066-
dc.identifier.epage2106066-
dc.identifier.isiWOS:000728158000001-
dc.publisher.placeGermany-

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