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- Publisher Website: 10.1088/1361-6463/ac6912
- WOS: WOS:000797194100001
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Article: Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias
Title | Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias |
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Authors | |
Issue Date | 2022 |
Publisher | IOP Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd |
Citation | Journal of Physics D: Applied Physics, 2022, v. 55 n. 31, p. 315102:1-8 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/314439 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | HO, LP | - |
dc.contributor.author | Younas, M | - |
dc.contributor.author | Borgersen, J | - |
dc.contributor.author | Khan, RTA | - |
dc.contributor.author | Rezvani, SJ | - |
dc.contributor.author | Pollastri, S | - |
dc.contributor.author | Akhtar, MJ | - |
dc.contributor.author | Nadeem, M | - |
dc.contributor.author | Huang, D | - |
dc.contributor.author | Shi, Y | - |
dc.contributor.author | Kuznetsov, A | - |
dc.contributor.author | Ling, FCC | - |
dc.date.accessioned | 2022-07-22T05:24:34Z | - |
dc.date.available | 2022-07-22T05:24:34Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | Journal of Physics D: Applied Physics, 2022, v. 55 n. 31, p. 315102:1-8 | - |
dc.identifier.uri | http://hdl.handle.net/10722/314439 | - |
dc.language | eng | - |
dc.publisher | IOP Publishing. The Journal's web site is located at http://www.iop.org/Journals/jpd | - |
dc.relation.ispartof | Journal of Physics D: Applied Physics | - |
dc.rights | Journal of Physics D: Applied Physics. Copyright © IOP Publishing. | - |
dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
dc.title | Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias | - |
dc.type | Article | - |
dc.identifier.email | Shi, Y: ylshi0@hku.hk | - |
dc.identifier.email | Ling, FCC: ccling@hkucc.hku.hk | - |
dc.identifier.authority | Ling, FCC=rp00747 | - |
dc.identifier.doi | 10.1088/1361-6463/ac6912 | - |
dc.identifier.hkuros | 334561 | - |
dc.identifier.volume | 55 | - |
dc.identifier.issue | 31 | - |
dc.identifier.spage | 315102:1 | - |
dc.identifier.epage | 8 | - |
dc.identifier.isi | WOS:000797194100001 | - |