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Conference Paper: Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors

TitleContact Engineering for High-Performance N-Type 2D Semiconductor Transistors
Authors
KeywordsPerformance evaluation
Two dimensional displays
Contact resistance
Ohmic contacts
Transistors
Issue Date2021
PublisherIEEE.
Citation
2021 IEEE International Electron Devices Meeting (IEDM), December 11-16, 2021. In Proceedings: 2021 IEEE International Electron Devices Meeting (IEDM), 11-16 Dec., 2021, p. 37.2.1-37.2.4 How to Cite?
AbstractTwo-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact to them has been challenging, which tremendously limit the transistor performance. In this paper, we review the recent research progress on the elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced gap states (MIGS). Specifically, an oxygen passivation method and a semimetallic contact technology were developed to reduce the DIGS and MIGS, respectively. Based on these approaches, much improved contact resistance and on-state current were observed. Key device metrics were extracted on these high-performance transistors, which reveals future directions for further improving the device performance.
Persistent Identifierhttp://hdl.handle.net/10722/315688

 

DC FieldValueLanguage
dc.contributor.authorLin, Y-
dc.contributor.authorShen, P-
dc.contributor.authorSu, C-
dc.contributor.authorChou, A-
dc.contributor.authorWu, T-
dc.contributor.authorCheng, C-
dc.contributor.authorPark, J-
dc.contributor.authorChiu, M-
dc.contributor.authorLu, A-
dc.contributor.authorTang, H-
dc.contributor.authorTavakoli, M-
dc.contributor.authorPitner, G-
dc.contributor.authorJi, X-
dc.contributor.authorMcGahan, C-
dc.contributor.authorWang, X-
dc.contributor.authorCai, Z-
dc.contributor.authorMao, N-
dc.contributor.authorWang, J-
dc.contributor.authorWang, Y-
dc.contributor.authorTisdale, W-
dc.contributor.authorLing, X-
dc.contributor.authorAidala, K-
dc.contributor.authorTung, V-
dc.contributor.authorLi, J-
dc.contributor.authorZettl, A-
dc.contributor.authorWu, C-
dc.contributor.authorGuo, J-
dc.contributor.authorWang, H-
dc.contributor.authorBokor, J-
dc.contributor.authorPalacios, T-
dc.contributor.authorLi, L-
dc.contributor.authorKong, J-
dc.date.accessioned2022-08-19T09:02:35Z-
dc.date.available2022-08-19T09:02:35Z-
dc.date.issued2021-
dc.identifier.citation2021 IEEE International Electron Devices Meeting (IEDM), December 11-16, 2021. In Proceedings: 2021 IEEE International Electron Devices Meeting (IEDM), 11-16 Dec., 2021, p. 37.2.1-37.2.4-
dc.identifier.urihttp://hdl.handle.net/10722/315688-
dc.description.abstractTwo-dimensional (2D) semiconductors are expected to have exceptional properties for ultimately scaled transistors, but forming ohmic contact to them has been challenging, which tremendously limit the transistor performance. In this paper, we review the recent research progress on the elimination of different gap-state pinning effects, including defect-induced gap states (DIGS) and metal-induced gap states (MIGS). Specifically, an oxygen passivation method and a semimetallic contact technology were developed to reduce the DIGS and MIGS, respectively. Based on these approaches, much improved contact resistance and on-state current were observed. Key device metrics were extracted on these high-performance transistors, which reveals future directions for further improving the device performance.-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofProceedings: 2021 IEEE International Electron Devices Meeting (IEDM), 11-16 Dec., 2021-
dc.rightsProceedings: 2021 IEEE International Electron Devices Meeting (IEDM), 11-16 Dec., 2021. Copyright © IEEE.-
dc.subjectPerformance evaluation-
dc.subjectTwo dimensional displays-
dc.subjectContact resistance-
dc.subjectOhmic contacts-
dc.subjectTransistors-
dc.titleContact Engineering for High-Performance N-Type 2D Semiconductor Transistors-
dc.typeConference_Paper-
dc.identifier.emailLi, L: lanceli1@hku.hk-
dc.identifier.authorityLi, L=rp02799-
dc.identifier.doi10.1109/IEDM19574.2021.9720668-
dc.identifier.hkuros335473-
dc.identifier.spage37.2.1-
dc.identifier.epage37.2.4-
dc.publisher.placeUnited States-

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