File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride

TitleAtomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
Authors
Chou, CLee, WChuu, CChen, THou, CYin, YWang, TShyue, JLi, LChen, M
Issue Date2021
Citation
Chemistry of Materials, 2021, v. 33, p. 5584-5590 How to Cite?
DOI: http://dx.doi.org/10.1021/acs.chemmater.1c00823
Persistent Identifierhttp://hdl.handle.net/10722/315778
ISI Accession Number ID
WOS:000679392400011

 

DC FieldValueLanguage
dc.contributor.authorChou, C-
dc.contributor.authorLee, W-
dc.contributor.authorChuu, C-
dc.contributor.authorChen, T-
dc.contributor.authorHou, C-
dc.contributor.authorYin, Y-
dc.contributor.authorWang, T-
dc.contributor.authorShyue, J-
dc.contributor.authorLi, L-
dc.contributor.authorChen, M-
dc.date.accessioned2022-08-19T09:04:15Z-
dc.date.available2022-08-19T09:04:15Z-
dc.date.issued2021-
dc.identifier.citationChemistry of Materials, 2021, v. 33, p. 5584-5590-
dc.identifier.urihttp://hdl.handle.net/10722/315778-
dc.languageeng-
dc.relation.ispartofChemistry of Materials-
dc.titleAtomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride-
dc.typeArticle-
dc.identifier.emailLi, L: lanceli1@hku.hk-
dc.identifier.authorityLi, L=rp02799-
dc.identifier.doi10.1021/acs.chemmater.1c00823-
dc.identifier.hkuros335485-
dc.identifier.volume33-
dc.identifier.spage5584-
dc.identifier.epage5590-
dc.identifier.isiWOS:000679392400011-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats