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Article: Solid-state electrochemical nanoimprinting of copper
Title | Solid-state electrochemical nanoimprinting of copper |
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Authors | |
Issue Date | 2007 |
Citation | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2007, v. 25, n. 6, p. 2419-2424 How to Cite? |
Abstract | For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication. © 2007 American Vacuum Society. |
Persistent Identifier | http://hdl.handle.net/10722/318445 |
ISSN | 2018 Impact Factor: 1.351 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Schultz, Peter L. | - |
dc.contributor.author | Hsu, Keng H. | - |
dc.contributor.author | Fang, Nicholas X. | - |
dc.contributor.author | Ferreira, Placid M. | - |
dc.date.accessioned | 2022-10-11T12:23:46Z | - |
dc.date.available | 2022-10-11T12:23:46Z | - |
dc.date.issued | 2007 | - |
dc.identifier.citation | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2007, v. 25, n. 6, p. 2419-2424 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10722/318445 | - |
dc.description.abstract | For the first time, the authors report highly selective dry etching of copper with a resolution of 80 nm using solid-state electrochemical nanoimprint technology. By exploiting the high mobility of copper ions in solid electrolytes such as copper sulfide, they are able to obtain etching rates up to 5 Ås without the use of contaminating liquids and excessive mechanical forces. Given the dearth of dry etch processes for metals in general and the fact that nanopatterning of metals is typically achieved indirectly using multistep processes, such a direct patterning technique offers potential application in a number of process steps in metallic interconnects and other nanoscale device fabrication. © 2007 American Vacuum Society. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | - |
dc.title | Solid-state electrochemical nanoimprinting of copper | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1116/1.2799977 | - |
dc.identifier.scopus | eid_2-s2.0-37149006441 | - |
dc.identifier.volume | 25 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 2419 | - |
dc.identifier.epage | 2424 | - |
dc.identifier.isi | WOS:000251611900131 | - |