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Article: Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays

TitleNonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays
Authors
Chern, WinstonHsu, KengChun, Ik SuAzeredo, Bruno P.D.Ahmed, NumairKim, Kyou HyunZuo, Jian MinFang, NickFerreira, PlacidLi, Xiuling
KeywordsLight-emitting
Metal-assisted-chemical-etching (MacEtch)
S4
Sidewall roughness
Silicon nanowire
Issue Date2010
Citation
Nano Letters, 2010, v. 10, n. 5, p. 1582-1588 How to Cite?
DOI: http://dx.doi.org/10.1021/nl903841a
AbstractSemiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemical-etching (MacEtch), to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion. Strong light emission in the entire visible and near infrared wavelength range at room temperature, tunable by etching condition, attributed to surface features, and enhanced by silver surface plasmon, is demonstrated. © 2010 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/318476
ISSN
1530-6984
2023 Impact Factor: 9.6
2023 SCImago Journal Rankings: 3.411
ISI Accession Number ID
WOS:000277444900010

 

DC FieldValueLanguage
dc.contributor.authorChern, Winston-
dc.contributor.authorHsu, Keng-
dc.contributor.authorChun, Ik Su-
dc.contributor.authorAzeredo, Bruno P.D.-
dc.contributor.authorAhmed, Numair-
dc.contributor.authorKim, Kyou Hyun-
dc.contributor.authorZuo, Jian Min-
dc.contributor.authorFang, Nick-
dc.contributor.authorFerreira, Placid-
dc.contributor.authorLi, Xiuling-
dc.date.accessioned2022-10-11T12:23:51Z-
dc.date.available2022-10-11T12:23:51Z-
dc.date.issued2010-
dc.identifier.citationNano Letters, 2010, v. 10, n. 5, p. 1582-1588-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/318476-
dc.description.abstractSemiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemical-etching (MacEtch), to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion. Strong light emission in the entire visible and near infrared wavelength range at room temperature, tunable by etching condition, attributed to surface features, and enhanced by silver surface plasmon, is demonstrated. © 2010 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectLight-emitting-
dc.subjectMetal-assisted-chemical-etching (MacEtch)-
dc.subjectS4-
dc.subjectSidewall roughness-
dc.subjectSilicon nanowire-
dc.titleNonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl903841a-
dc.identifier.pmid20423044-
dc.identifier.scopuseid_2-s2.0-77952399699-
dc.identifier.volume10-
dc.identifier.issue5-
dc.identifier.spage1582-
dc.identifier.epage1588-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000277444900010-

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