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Article: Terahertz plasmonics in ferroelectric-gated graphene

TitleTerahertz plasmonics in ferroelectric-gated graphene
Authors
Issue Date2013
Citation
Applied Physics Letters, 2013, v. 102, n. 20, article no. 201118 How to Cite?
AbstractInspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100-200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides. © 2013 AIP Publishing LLC.
Persistent Identifierhttp://hdl.handle.net/10722/318538
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJin, Dafei-
dc.contributor.authorKumar, Anshuman-
dc.contributor.authorHung Fung, Kin-
dc.contributor.authorXu, Jun-
dc.contributor.authorFang, Nicholas X.-
dc.date.accessioned2022-10-11T12:23:59Z-
dc.date.available2022-10-11T12:23:59Z-
dc.date.issued2013-
dc.identifier.citationApplied Physics Letters, 2013, v. 102, n. 20, article no. 201118-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/318538-
dc.description.abstractInspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100-200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides. © 2013 AIP Publishing LLC.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleTerahertz plasmonics in ferroelectric-gated graphene-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.4807762-
dc.identifier.scopuseid_2-s2.0-84878353306-
dc.identifier.volume102-
dc.identifier.issue20-
dc.identifier.spagearticle no. 201118-
dc.identifier.epagearticle no. 201118-
dc.identifier.isiWOS:000320619300018-

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