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Article: Ultrasmooth silver thin films deposited with a germanium nucleation layer

TitleUltrasmooth silver thin films deposited with a germanium nucleation layer
Authors
Issue Date2009
Citation
Nano Letters, 2009, v. 9, n. 1, p. 178-182 How to Cite?
AbstractWe demonstrate an effective method for depositing smooth silver (Ag) films on SiO 2/Si(100) substrates using a thin seed layer of evaporated germanium (Ge). The deposited Ag films exhibit smaller root-mean-square surface roughness, narrower peak-to-valley surface topological height distribution, smaller grain-size distribution, and smaller sheet resistance in comparison to those of Ag films directly deposited on SiO 2/Si(100) substrates. Optically thin (̃10-20 nm) Ag films deposited with ̃1-2 nm Ge nucleation layers show more than an order of magnitude improvement in the surface roughness. The presence of the thin layer of Ge changes the growth kinetics (nucleation and evolution) of the electron-beam-evaporated Ag, leading to Ag films with smooth surface morphology and high electrical conductivity. The demonstrated Ag thin films are very promising for large-scale applications as molecular anchors, optical metamaterials, plasmonic devices, and several areas of nanophotonics. © 2009 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/318980
ISSN
2021 Impact Factor: 12.262
2020 SCImago Journal Rankings: 4.853

 

DC FieldValueLanguage
dc.contributor.authorLogeeswaran, V. J.-
dc.contributor.authorKobayashi, Nobuhiko P.-
dc.contributor.authorIslam, M. Saif-
dc.contributor.authorWu, Wei-
dc.contributor.authorChaturvedi, Pratik-
dc.contributor.authorFang, Nicholas X.-
dc.contributor.authorWang, Shih Yuan-
dc.contributor.authorWilliams, R. Stanley-
dc.date.accessioned2022-10-11T12:25:00Z-
dc.date.available2022-10-11T12:25:00Z-
dc.date.issued2009-
dc.identifier.citationNano Letters, 2009, v. 9, n. 1, p. 178-182-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/318980-
dc.description.abstractWe demonstrate an effective method for depositing smooth silver (Ag) films on SiO 2/Si(100) substrates using a thin seed layer of evaporated germanium (Ge). The deposited Ag films exhibit smaller root-mean-square surface roughness, narrower peak-to-valley surface topological height distribution, smaller grain-size distribution, and smaller sheet resistance in comparison to those of Ag films directly deposited on SiO 2/Si(100) substrates. Optically thin (̃10-20 nm) Ag films deposited with ̃1-2 nm Ge nucleation layers show more than an order of magnitude improvement in the surface roughness. The presence of the thin layer of Ge changes the growth kinetics (nucleation and evolution) of the electron-beam-evaporated Ag, leading to Ag films with smooth surface morphology and high electrical conductivity. The demonstrated Ag thin films are very promising for large-scale applications as molecular anchors, optical metamaterials, plasmonic devices, and several areas of nanophotonics. © 2009 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.titleUltrasmooth silver thin films deposited with a germanium nucleation layer-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl8027476-
dc.identifier.pmid19105737-
dc.identifier.scopuseid_2-s2.0-61649122902-
dc.identifier.volume9-
dc.identifier.issue1-
dc.identifier.spage178-
dc.identifier.epage182-

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