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- Publisher Website: 10.1007/s11431-020-1678-6
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Article: Compressive elastic behavior of single-crystalline 4H-silicon carbide (SiC) nanopillars
Title | Compressive elastic behavior of single-crystalline 4H-silicon carbide (SiC) nanopillars |
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Authors | |
Keywords | compressive behavior elastic deformation elastic strain engineering in situ SEM/TEM silicon carbide |
Issue Date | 2021 |
Citation | Science China Technological Sciences, 2021, v. 64, n. 1, p. 37-43 How to Cite? |
Abstract | As a wide-bandgap semiconductor, 4H-SiC is an ideal material for high-power and high-frequency devices, and plays an increasingly important role in developing our country’s future electric vehicles and 5G techniques. Practical applications of SiC-based devices largely depend on their mechanical performance and reliability at the micro- and nanoscales. In this paper, single-crystal [0001]-oriented 4H-SiC nanopillars with the diameter ranging from ~200 to 700 nm were microfabricated and then characterized by in situ nanomechanical testing under SEM/TEM at room temperature. Loading-unloading compression tests were performed, and large, fully reversible elastic strain up to ~6.2% was found in nanosized pillars. Brittle fracture still occurred when the max strain reached ~7%, with corresponding compressive strength above 30 GPa, while in situ TEM observation showed few dislocations activated during compression along the [0001] direction. Besides robust microelectromechanical system (MEMS), flexible device and nanocomposite applications, the obtained large elasticity in [0001]-oriented 4H-SiC nanopillars can offer a fertile opportunity to modulate their electron mobility and bandgap structure by nanomechanical straining, the so called “elastic strain engineering”, for novel electronic and optoelectronic applications. |
Persistent Identifier | http://hdl.handle.net/10722/326236 |
ISSN | 2023 Impact Factor: 4.4 2023 SCImago Journal Rankings: 0.827 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Fan, Su Feng | - |
dc.contributor.author | Li, Xiao Cui | - |
dc.contributor.author | Fan, Rong | - |
dc.contributor.author | Lu, Yang | - |
dc.date.accessioned | 2023-03-09T09:59:06Z | - |
dc.date.available | 2023-03-09T09:59:06Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Science China Technological Sciences, 2021, v. 64, n. 1, p. 37-43 | - |
dc.identifier.issn | 1674-7321 | - |
dc.identifier.uri | http://hdl.handle.net/10722/326236 | - |
dc.description.abstract | As a wide-bandgap semiconductor, 4H-SiC is an ideal material for high-power and high-frequency devices, and plays an increasingly important role in developing our country’s future electric vehicles and 5G techniques. Practical applications of SiC-based devices largely depend on their mechanical performance and reliability at the micro- and nanoscales. In this paper, single-crystal [0001]-oriented 4H-SiC nanopillars with the diameter ranging from ~200 to 700 nm were microfabricated and then characterized by in situ nanomechanical testing under SEM/TEM at room temperature. Loading-unloading compression tests were performed, and large, fully reversible elastic strain up to ~6.2% was found in nanosized pillars. Brittle fracture still occurred when the max strain reached ~7%, with corresponding compressive strength above 30 GPa, while in situ TEM observation showed few dislocations activated during compression along the [0001] direction. Besides robust microelectromechanical system (MEMS), flexible device and nanocomposite applications, the obtained large elasticity in [0001]-oriented 4H-SiC nanopillars can offer a fertile opportunity to modulate their electron mobility and bandgap structure by nanomechanical straining, the so called “elastic strain engineering”, for novel electronic and optoelectronic applications. | - |
dc.language | eng | - |
dc.relation.ispartof | Science China Technological Sciences | - |
dc.subject | compressive behavior | - |
dc.subject | elastic deformation | - |
dc.subject | elastic strain engineering | - |
dc.subject | in situ SEM/TEM | - |
dc.subject | silicon carbide | - |
dc.title | Compressive elastic behavior of single-crystalline 4H-silicon carbide (SiC) nanopillars | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1007/s11431-020-1678-6 | - |
dc.identifier.scopus | eid_2-s2.0-85089974050 | - |
dc.identifier.volume | 64 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 37 | - |
dc.identifier.epage | 43 | - |
dc.identifier.eissn | 1869-1900 | - |
dc.identifier.isi | WOS:000563600300001 | - |