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Article: Design and test of a 20 ps TDC for different applications

TitleDesign and test of a 20 ps TDC for different applications
Authors
Bruno, S.Cardarelli, R.Di Ciaccio, A.Caltabiano, A.Pizzimento, L.Rocchi, A.
Issue Date2018
Citation
Nuovo Cimento della Societa Italiana di Fisica C, 2018, v. 41, n. 1-2, article no. 72 How to Cite?
DOI: http://dx.doi.org/10.1393/ncc/i2018-18072-1
AbstractIn this paper we will describe a new type of TDC that has a resolution of 20 ps. This device is realized in SiGe BiCMOS technology 0.13 μm. This technology was chosen since its structure guarantees more radiation hardness, less noise and high speed than silicon technology. A very accurate time resolution may find many applications in the high energy physics field or in medical physics.
Persistent Identifierhttp://hdl.handle.net/10722/327582
ISSN
2037-4909
2023 Impact Factor: 0.3
2023 SCImago Journal Rankings: 0.180
ISI Accession Number ID
WOS:000444627100063

 

DC FieldValueLanguage
dc.contributor.authorBruno, S.-
dc.contributor.authorCardarelli, R.-
dc.contributor.authorDi Ciaccio, A.-
dc.contributor.authorCaltabiano, A.-
dc.contributor.authorPizzimento, L.-
dc.contributor.authorRocchi, A.-
dc.date.accessioned2023-04-03T12:27:49Z-
dc.date.available2023-04-03T12:27:49Z-
dc.date.issued2018-
dc.identifier.citationNuovo Cimento della Societa Italiana di Fisica C, 2018, v. 41, n. 1-2, article no. 72-
dc.identifier.issn2037-4909-
dc.identifier.urihttp://hdl.handle.net/10722/327582-
dc.description.abstractIn this paper we will describe a new type of TDC that has a resolution of 20 ps. This device is realized in SiGe BiCMOS technology 0.13 μm. This technology was chosen since its structure guarantees more radiation hardness, less noise and high speed than silicon technology. A very accurate time resolution may find many applications in the high energy physics field or in medical physics.-
dc.languageeng-
dc.relation.ispartofNuovo Cimento della Societa Italiana di Fisica C-
dc.titleDesign and test of a 20 ps TDC for different applications-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1393/ncc/i2018-18072-1-
dc.identifier.scopuseid_2-s2.0-85065613855-
dc.identifier.volume41-
dc.identifier.issue1-2-
dc.identifier.spagearticle no. 72-
dc.identifier.epagearticle no. 72-
dc.identifier.eissn1826-9885-
dc.identifier.isiWOS:000444627100063-

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