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Article: Development of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments

TitleDevelopment of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments
Authors
Pizzimento, L.Cardarelli, R.Bruno, S.Caltabiano, A.Camarri, P.Di Ciaccio, A.Liberti, B.Rocchi, A.
Issue Date2018
Citation
Nuovo Cimento della Societa Italiana di Fisica C, 2018, v. 41, n. 1-2, article no. 82 How to Cite?
DOI: http://dx.doi.org/10.1393/ncc/i2018-18082-y
AbstractThe Resistive Plate Chamber (RPC) detector Front-End (FE) for high-rate experiments is being developed. A mixed technology in silicon and silicon-germanium is used in order to enhance its performances: a preamplifier in silicon with a very low inner noise (1000 e − rms) and a new kind of discriminator in SiGe technology with a threshold of the order of 1 mV.
Persistent Identifierhttp://hdl.handle.net/10722/327583
ISSN
2037-4909
2023 Impact Factor: 0.3
2023 SCImago Journal Rankings: 0.180
ISI Accession Number ID
WOS:000444627100072

 

DC FieldValueLanguage
dc.contributor.authorPizzimento, L.-
dc.contributor.authorCardarelli, R.-
dc.contributor.authorBruno, S.-
dc.contributor.authorCaltabiano, A.-
dc.contributor.authorCamarri, P.-
dc.contributor.authorDi Ciaccio, A.-
dc.contributor.authorLiberti, B.-
dc.contributor.authorRocchi, A.-
dc.date.accessioned2023-04-03T12:27:49Z-
dc.date.available2023-04-03T12:27:49Z-
dc.date.issued2018-
dc.identifier.citationNuovo Cimento della Societa Italiana di Fisica C, 2018, v. 41, n. 1-2, article no. 82-
dc.identifier.issn2037-4909-
dc.identifier.urihttp://hdl.handle.net/10722/327583-
dc.description.abstractThe Resistive Plate Chamber (RPC) detector Front-End (FE) for high-rate experiments is being developed. A mixed technology in silicon and silicon-germanium is used in order to enhance its performances: a preamplifier in silicon with a very low inner noise (1000 e − rms) and a new kind of discriminator in SiGe technology with a threshold of the order of 1 mV.-
dc.languageeng-
dc.relation.ispartofNuovo Cimento della Societa Italiana di Fisica C-
dc.titleDevelopment of a new front-end electronics in Si and SiGe technology for the Resistive Plate Chamber (RPC) detector for high-rate experiments-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1393/ncc/i2018-18082-y-
dc.identifier.scopuseid_2-s2.0-85065614744-
dc.identifier.volume41-
dc.identifier.issue1-2-
dc.identifier.spagearticle no. 82-
dc.identifier.epagearticle no. 82-
dc.identifier.eissn1826-9885-
dc.identifier.isiWOS:000444627100072-

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