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Article: Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation

TitleSuppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation
Authors
Issue Date1-Apr-2023
PublisherInstitute of Electrical and Electronics Engineers
Citation
IEEE Electron Device Letters, 2023, v. 44, n. 4, p. 578-581 How to Cite?
AbstractSiC junction barrier Schottky diode fabrication involves multi-folded Al ion implantation for realizing p-type doping. With a new fabrication recipe, we demonstrate that the trade-off between sufficiently high Al acceptor activation and sufficiently low residual concentration of carbon vacancies - acting as free carrier traps - may be resolved applying relatively low temperature anneals (1700. C), followed by the thermal oxidation which leads to in-diffusion of the carbon interstitials from the C-rich sacrifice-oxide/SiC interface. Specifically, we detected two major interconnected factors: suppression of the carbon vacancies and dramatic reduction of the reverse leakage current (by 32 times at -1200 V). The reduction of the reverse biased current is correlated with the removal of the carbon vacancies, interconnected with the Poole-Frenkel emission contribution to the leakage current.
Persistent Identifierhttp://hdl.handle.net/10722/328457
ISSN
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLin, TX-
dc.contributor.authorLi, SH-
dc.contributor.authorHo, LP-
dc.contributor.authorKuznetsov, A-
dc.contributor.authorLee, HN-
dc.contributor.authorChau, T-
dc.contributor.authorLing, FCC-
dc.date.accessioned2023-06-28T04:45:07Z-
dc.date.available2023-06-28T04:45:07Z-
dc.date.issued2023-04-01-
dc.identifier.citationIEEE Electron Device Letters, 2023, v. 44, n. 4, p. 578-581-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/328457-
dc.description.abstractSiC junction barrier Schottky diode fabrication involves multi-folded Al ion implantation for realizing p-type doping. With a new fabrication recipe, we demonstrate that the trade-off between sufficiently high Al acceptor activation and sufficiently low residual concentration of carbon vacancies - acting as free carrier traps - may be resolved applying relatively low temperature anneals (1700. C), followed by the thermal oxidation which leads to in-diffusion of the carbon interstitials from the C-rich sacrifice-oxide/SiC interface. Specifically, we detected two major interconnected factors: suppression of the carbon vacancies and dramatic reduction of the reverse leakage current (by 32 times at -1200 V). The reduction of the reverse biased current is correlated with the removal of the carbon vacancies, interconnected with the Poole-Frenkel emission contribution to the leakage current.-
dc.languageeng-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.relation.ispartofIEEE Electron Device Letters-
dc.titleSuppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation-
dc.typeArticle-
dc.identifier.doi10.1109/LED.2023.3242296-
dc.identifier.volume44-
dc.identifier.issue4-
dc.identifier.spage578-
dc.identifier.epage581-
dc.identifier.eissn1558-0563-
dc.identifier.isiWOS:000966384700001-
dc.publisher.placePISCATAWAY-
dc.identifier.issnl0741-3106-

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